S.M.M. Coelho

University of Pretoria — South Africa

Physics and Astronomy · Physical Sciences

12h-index521citations44works0.02yr avg
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Research Topics

Semiconductor materials and interfaces(27), Semiconductor materials and devices(24), Silicon and Solar Cell Technologies(12), Silicon Carbide Semiconductor Technologies(9), Semiconductor Quantum Structures and Devices(6)

Publications44 total

Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC
Materials Science in Semiconductor Processing·2016· 19 cited
Electrical Characterization of Defects Introduced in <i>n</i>-Type N-Doped 4H-SiC during Electron Beam Exposure
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2015· 4 cited
Electrical Characterisation of electron beam exposure induced Defects in silicon
Physica B Condensed Matter·2015· 7 cited
Effects of 5.4 MeV alpha-particle irradiation on the electrical properties of nickel Schottky diodes on 4H–SiC
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2015· 25 cited
Solid State Reaction and Operational Stability of Ruthenium Schottky Contact-on-6H-SiC Under Argon Annealing
Journal of Electronic Materials·2015· 3 cited
Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing
Bulletin of Materials Science·2015Open Access
The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes
Materials Science in Semiconductor Processing·2015· 59 cited
Long range annealing of defects in germanium by low energy plasma ions
Physica D Nonlinear Phenomena·2015· 35 cited
Experimental Observation of Intrinsic Localized Modes in Germanium
Springer series in materials science·2015· 8 citedOpen Access
The Origin of Defects Induced in Ultra-Pure Germanium by Electron Beam Deposition
Springer series in materials science·2015· 7 citedOpen Access
Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes
Brazilian Journal of Physics·2014
Microstructure evolution and diffusion of ruthenium in silicon carbide, and the implications for structural integrity of SiC layer in TRISO coated fuel particles
Journal of Nuclear Materials·2014· 4 cited
Electrical characterization of process induced defects in germanium
UpSpace Institutional Repository (University of Pretoria)·2014Open Access
Solid state reaction of ruthenium with silicon carbide, and the implications for its use as a Schottky contact for high temperature operating Schottky diodes
Materials Science and Engineering B·2013· 7 cited
Unexpected properties of the inductively coupled plasma induced defect in germanium
Physica B Condensed Matter·2013· 5 cited
Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure
Journal of Applied Physics·2013· 18 citedOpen Access
Experimental observation of moving discrete breathers in Germanium
2013
Electrical characterization of defects introduced in n‐Si during electron beam deposition of Pt
physica status solidi (a)·2012· 11 cited
Photo-triggered pulsed cavity compressor for bright electron bunches in ultrafast electron diffraction
Applied Physics B·2012· 34 cited
Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTS
Journal of Applied Physics·2012· 33 cited
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Frequent Co-authors

F.D. Auret(41), W.E. Meyer(20), P.J. Janse van Rensburg(15), J.M. Nel(15), C. Nyamhere(11), M. Hayes(8), Mmantsae Diale(7), Kinnock V. Munthali(5), C.C. Theron(5), A. Venter(5), E. Omotoso(4), W. Mtangi(4), A. Chawanda(4), E.G. Njoroge(4), J.R. Botha(4), Juan F. R. Archilla(3), V.I. Dubinko(3), G. Myburg(3), Linda C. Prinsloo(3), Günther Kassier(2)