B. Terreault

Institut National de la Recherche Scientifique — Canada

Engineering · Physical Sciences

24h-index2.3kcitations157works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Ion-surface interactions and analysis(64), Fusion materials and technologies(52), Magnetic confinement fusion research(37), Silicon and Solar Cell Technologies(32), Metal and Thin Film Mechanics(22)

Publications157 total

Facile synthesis of highly stable<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>a</mml:mi><mml:mtext>-Si</mml:mtext></mml:mrow></mml:math>by ion implantation of low-keV H isotopes
Physical Review B·2009· 2 cited
Amorphisation and sub‐100‐nm exfoliation of hydrogen‐ion‐implanted silicon
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2009· 2 cited
Publisher’s Note: “Raman-scattering elucidation of the giant isotope effect in hydrogen-ion blistering of silicon” [J. Chem. Phys. 121, 7973 (2004)]
The Journal of Chemical Physics·2009Open Access
Thermal evolution of defects produced by implantation of H, D and He in Silicon
Applied Surface Science·2008· 16 cited
Implantation effects of low energy H and D ions in germanium at −120 °C and room temperature
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2008· 5 cited
Hydrogen blistering of silicon: Effect of implantation temperature, isotope dependence, and key role of dynamic annealing
Journal of Applied Physics·2007· 7 cited
Hydrogen blistering of silicon: Progress in fundamental understanding
physica status solidi (a)·2007· 118 cited
Review Article: Hydrogen blistering of silicon: Progress in fundamental understanding
physica status solidi (a)·2007
Systematics of the giant isotope effect in hydrogen ion blistering of materials
Surface and Coatings Technology·2007· 3 cited
Online system for temperature and accumulated dose control in plasma-based ion implantation
Review of Scientific Instruments·2007· 1 citedOpen Access
Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon
Physical Review B·2007· 32 cited
Ion cutting and transfer of sub-100-nm silicon layers using low-keV H, D, and He ions
Applied Physics Letters·2006· 8 cited
Isotope Effects in Low-Energy Ion-Induced Splitting
ECS Meeting Abstracts·2006
Hydrogen/Deuterium-defect complexes involved in the ion cutting of Si (001) at the sub-100nm scale
Physica B Condensed Matter·2006· 5 cited
Creating nanostructures on silicon using ion blistering and electron beam lithography
Nanotechnology·2006· 11 cited
Ion blistering of boron-doped silicon: The critical role of defect passivation
Applied Physics Letters·2005· 9 cited
Blistering of GaAs by low keV H, D, and He ions
Applied Physics Letters·2005· 14 cited
Blistering effects of low energy hydrogen and helium ions implanted in GaAs(1 0 0) crystals
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2005· 3 cited
Co-axial ECR plasma system for radioactive ion implantation
Plasma Sources Science and Technology·2005· 3 cited
Efficiency of plasma-based ion implantation of radioisotopes (32P)
Surface and Coatings Technology·2005· 13 cited
page 1 of 8Next →

Frequent Co-authors

G. Abel(10), J.R.H. Ross(10), J.G. Martel(9), C. Boucher(9), G. Veilleux(9), J. L’Ecuyer(8), B.L. Stansfield(8), C. Brassard(7), R.G. St-Jacques(7), E. Haddad(7), C. Cardinal(6), J.P. Labrie(6), A. Côté(6), Oussama Moutanabbir(6), W. Zuzak(6), G.G. Ross(5), R. Décoste(5), J.-L. Lachambre(5), Daniel Michaud(5), N. Richard(5)