Makoto Sekine

Nagoya University — Japan

Engineering · Physical Sciences

32h-index5.0kcitations514works16.12yr avg
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Research Topics

Plasma Diagnostics and Applications(190), Semiconductor materials and devices(164), Metal and Thin Film Mechanics(101), Diamond and Carbon-based Materials Research(86), Plasma Applications and Diagnostics(69)

Publications512 total

Role of CF4 Addition in Gas-Phase Variations in HF Plasma for Cryogenic Etching: Insights from Plasma Simulation and Experimental Correlation
Plasma·2025Open Access
Hydrofluoroethane plasma etching of SiN, SiO2, and poly-Si films with CHF2CF3, CF3CH3, and CHF2CH3
Applied Surface Science·2024· 5 citedOpen Access
Analysis of the synergetic effect of process parameters of hydrogenated amorphous carbon deposition in plasma-enhanced chemical vapor deposition using machine learning
Diamond and Related Materials·2024· 1 citedOpen Access
Optical actinometry for number density measurements in low-pressure plasmas: Advantages, error sources, and method validation
Journal of Applied Physics·2024· 10 cited
Plasma simulation of HF plasma generated in dual-frequency chamber for high aspect ratio dielectric etching
Japanese Journal of Applied Physics·2024· 3 citedOpen Access
Future of plasma etching for microelectronics: Challenges and opportunities
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2024· 106 citedOpen Access
<i>In situ</i> atom-resolved observation of Si (111) 7×7 surface with F radical and Ar ion irradiation simulated atomic layer etching
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2024· 1 cited
Dissociative properties of C<sub>4</sub>F<sub>6</sub> obtained using computational chemistry
Japanese Journal of Applied Physics·2024· 3 citedOpen Access
(Invited) Plasma-Enhanced Deposition Mechanism of Hydrogenated Amorphous Carbon Analyzed By Combining Reactive Species Measurement and Machine Learning
ECS Meeting Abstracts·2023
Etching Mechanism Based on Hydrogen Fluoride Interactions with Hydrogenated SiN Films Using HF/H<sub>2</sub> and CF<sub>4</sub>/H<sub>2</sub> Plasmas
ACS Applied Electronic Materials·2023· 22 cited
An approach to reduce surface charging with cryogenic plasma etching using hydrogen-fluoride contained gases
Applied Physics Letters·2023· 20 cited
(Invited) Recent Progress in the Synthesis of Functional and Three-Dimensional Carbon Nano-Composites By Gas-Liquid Interface Plasma
ECS Meeting Abstracts·2023
Comparison of distributions of etching rate and calculated plasma parameters in dual-frequency capacitively coupled plasma
Japanese Journal of Applied Physics·2023· 3 citedOpen Access
In Situ Monitoring of Etching Characteristic and Surface Reactions in Atomic Layer Etching of SiN Using Cyclic CF<sub>4</sub>/H<sub>2</sub> and H<sub>2</sub> Plasmas
ACS Applied Materials & Interfaces·2023· 21 cited
Bias-supply timing tailored to the aspect ratio dependence of silicon trench etching in Ar plasma with alternately injected C4F8 and SF6
Applied Surface Science·2023· 9 citedOpen Access
Manipulation of etch selectivity of silicon nitride over silicon dioxide to a-carbon by controlling substrate temperature with a CF4/H2 plasma
Vacuum·2023· 25 cited
An Etching Mechanism Based on Hydrogen Fluoride Interactions with Hydrogenated Sin Films Using Hf/H2 and Cf4/H2 Plasmas
SSRN Electronic Journal·2023Open Access
(Invited) Synthesis, Functionalization, and Three-Dimensional Structuring of Carbon Nanomaterials By Gas-Liquid Interface Plasma
ECS Meeting Abstracts·2022· 1 cited
Dissociation channels of c-C <sub>4</sub> F <sub>8</sub> to C <sub>2</sub> F <sub>4</sub> in reactive plasma
Japanese Journal of Applied Physics·2022· 5 cited
Effects of deposition precursors of hydrogenated amorphous carbon films on the plasma etching resistance based on mass spectrometer measurements and machine learning analysis
Vacuum·2022· 15 cited
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Frequent Co-authors

Masaru Hori(30), Kenji Ishikawa(21), Hiroki Kondo(18), Keigo Takeda(10), Masahiro Tokumura(5), Mineo Hiramatsu(5), H. Okano(5), Takayoshi Tsutsumi(5), Miyako Matsui(4), Hisataka Hayashi(4), Itsuko Sakai(4), Hitoshi Watanabe(4), Hiromasa Tanaka(3), Mohammad Raknuzzaman(3), Md. Kawser Ahmed(3), Md. Saiful Islam(3), Md. Habibullah‐Al‐Mamun(3), Shigeki Masunaga(3), Tomoaki Tatsumi(3), Tetsuya Tatsumi(3)