Duk‐Hyun Choe

Samsung (South Korea) — South Korea

Materials Science · Physical Sciences

24h-index3.8kcitations78works3.72yr avg
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Research Topics

Graphene research and applications(26), Ferroelectric and Negative Capacitance Devices(22), 2D Materials and Applications(20), Advanced Memory and Neural Computing(13), Semiconductor materials and devices(12)

Publications78 total

Designing Oxide-Channel FeFETs for 1T Embedded Memory
2025
Fatigue-Free Ferroelectric HZO Operable at 1V with &gt;10 <sup>12</sup> Endurance via Precycling Pulse Engineering
2025
Ferroelectric transistors for low-power NAND flash memory
Nature·2025· 2 cited
Reducing Coercive Field and Improving Endurance in Ferroelectric Epitaxial Hf <sub>0.5</sub> Zr <sub>0.5</sub> O <sub>2</sub> Thin Films via Novel Interface Layer Approach
Advanced Science·2025Open Access
Laminated Ferroelectric Stack for Enhanced ISPP Slope and Endurance in FE-NAND
IEEE Electron Device Letters·2025
Field‐Induced Structural Dynamics of Polarization Switching in Hf <sub>x</sub> Zr <sub>1‐x</sub> O <sub>2</sub> Thin Films
Advanced Materials·2025
Recent Advances and Outlook on Ferroelectric NAND Technology
2025
Sub-nm2 ferroelectric domains via charged 180 degree walls in ZrO2
ArXiv.org·2025Open Access
Ferroelectric NAND for efficient hardware bayesian neural networks
Nature Communications·2025· 6 citedOpen Access
A Novel Analysis Framework for Microstructural Characterization of Ferroelectric Hafnia: Experimental Validation and Application
arXiv (Cornell University)·2025Open Access
Gate-stack Optimization to Mitigate the Cylindrical Effect in Ferroelectric VNAND
2024· 7 cited
Boosting non-volatile memory performance with exhalative annealing: A novel approach to low-temperature crystallization of hafnia based ferroelectric
Materials Today Nano·2024· 2 cited
Novel Ultra-Wideband Characterization Method for Ferroelectric's Non-Linearity
2024
Resetting the Drift of Oxygen Vacancies in Ultrathin HZO Ferroelectric Memories by Electrical Pulse Engineering
Small Science·2024· 4 citedOpen Access
Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer
2024· 17 cited
Drain Current Degradation Induced by Charge Trapping/De-Trapping in Fe-FET
2024· 1 cited
A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNAND
2024· 10 cited
Laminated Ferroelectric FET With Large Memory Window and High Reliability
IEEE Transactions on Electron Devices·2024· 19 cited
Interfacial Layer Selection Methodology for Customized Ferroelectric Memories
IEEE Transactions on Electron Devices·2024· 2 cited
An analytical interpretation of the memory window in ferroelectric field-effect transistors
Applied Physics Letters·2023· 18 cited
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Frequent Co-authors

Jinseong Heo(18), Sanghyun Jo(14), Seung‐Geol Nam(13), Taehwan Moon(10), Hyun Jae Lee(9), Hagyoul Bae(9), Sijung Yoo(9), K. J. Chang(8), Yoonsang Park(8), Daewon Ha(7), Bong Jin Kuh(6), J. W. Nam(6), Young Hee Lee(5), Shengbai Zhang(5), Sang‐Wook Kim(5), H. J. Lee(5), Suyeon Cho(4), Sung Wng Kim(4), Heejun Yang(4), Damien West(4)