Hemi H. Gandhi

Harvard University — United States

Engineering · Physical Sciences

9h-index889citations16works5.02yr avg
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Research Topics

Thin-Film Transistor Technologies(7), Silicon Nanostructures and Photoluminescence(6), Photonic and Optical Devices(5), Nanowire Synthesis and Applications(4), Semiconductor Quantum Structures and Devices(3)

Publications16 total

Private equity renewable energy investments in India
Heliyon·2024· 5 citedOpen Access
Strategic investment risks threatening India's renewable energy ambition
Energy Strategy Reviews·2022· 43 citedOpen Access
Carrier Dynamics and Absorption Properties of Gold-Hyperdoped Germanium: Insight Into Tailoring Defect Energetics
Physical Review Applied·2021· 7 citedOpen Access
Gold-Hyperdoped Germanium with Room-Temperature Sub-Band-Gap Optoelectronic Response
Physical Review Applied·2020· 20 cited
Carrier Lifetime of Au-Hyperdoped Ge using Terahertz Spectroscopy
2020
Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection
AIP Advances·2020· 11 citedOpen Access
Evaluating Charge Carrier Lifetime of Laser Hyperdoped Germanium Using Terahertz Spectroscopy
Conference on Lasers and Electro-Optics·2020
High level active <i>n</i>+ doping of strained germanium through co-implantation and nanosecond pulsed laser melting
Journal of Applied Physics·2018· 15 citedOpen Access
Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique
Journal of Applied Physics·2017· 7 citedOpen Access
Ion-beam synthesis and thermal stability of highly tin-concentrated germanium – tin alloys
Materials Science in Semiconductor Processing·2016· 9 citedOpen Access
Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer
Applied Physics Letters·2016· 22 citedOpen Access
Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material
Journal of Applied Physics·2016· 33 citedOpen Access
Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing
Journal of Applied Physics·2015· 58 citedOpen Access
N Type Doping of Strained Epitaxial Germanium Films Using Ion Implantation Followed by Nanosecond Pulse Laser Melting
Research Explorer (The University of Manchester)·2015· 4 cited
Ultrafast laser processing of materials: a review
Advances in Optics and Photonics·2015· 650 cited
Laser doping and texturing of silicon for advanced optoelectronic devices
2015· 5 cited

Frequent Co-authors

David Pastor(11), Eric Mazur(10), Michael J. Aziz(9), Tuan T. Tran(6), J. S. Williams(6), E. Napolitani(4), Ruggero Milazzo(3), Corentin Monmeyran(3), R. Gwilliam(3), Iain F. Crowe(3), Jürgen Michel(3), Lionel C. Kimerling(3), Anu Agarwal(3), Naheed Ferdous(3), Elif Ertekin(3), Meng‐Ju Sher(3), Benjamin Franta(2), Bram Hoex(2), Brett Hallam(2), Lachlan Smillie(2)