Nisha Prakash

Barrow Neurological Institute — United States

Materials Science · Physical Sciences

9h-index333citations20works0.02yr avg
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Research Topics

Ga2O3 and related materials(10), GaN-based semiconductor devices and materials(8), 2D Materials and Applications(7), ZnO doping and properties(5), Nanowire Synthesis and Applications(4)

Publications20 total

DDDR-68. HDAC inhibition–induced neuronal-like state creates cytoskeletal vulnerabilities in glioblastoma
Neuro-Oncology·2025Open Access
Towards a transcriptomic biomarker for the classification of melanocytic neoplasms
PLoS Genetics·2025Open Access
r-GO/MoS2 heterostructures ultrasensitive self-powered photodetector operating in both narrowband and broadband regimes
Microsystem Technologies·2025
62737 Towards a transcriptomic biomarker for the classification of melanocytic lesions
Journal of the American Academy of Dermatology·2025
Edge-contact large area hetero-structure fast photodetector utilizing two-dimensional r-GO on three-dimensional GaN material interface
Sensors and Actuators A Physical·2019· 11 cited
Solution-Processed-2D on 3D Heterojunction UV–Visible Photodetector for Low-Light Applications
ACS Applied Electronic Materials·2019· 21 cited
Long‐Term, High‐Voltage, and High‐Temperature Stable Dual‐Mode, Low Dark Current Broadband Ultraviolet Photodetector Based on Solution‐Cast r‐GO on MBE‐Grown Highly Resistive GaN
Advanced Optical Materials·2019· 25 cited
Enhanced Photodetection in Visible Region in rGO/GaN Based Hybrid Photodetector
Springer proceedings in physics·2019· 1 cited
Broadband Photodetector with Lateral n-rGO/p+Si Heterojunction
Springer proceedings in physics·2019· 1 cited
Binary Multifunctional Ultrabroadband Self‐Powered g‐C<sub>3</sub>N<sub>4</sub>/Si Heterojunction High‐Performance Photodetector
Advanced Optical Materials·2018· 50 citedOpen Access
Large bandgap reduced graphene oxide (rGO) based <i>n-p</i> <sup>+</sup> heterojunction photodetector with improved NIR performance
Semiconductor Science and Technology·2018· 27 cited
Mixed Phase Compositions of MoS 2 Ultra Thin Film Grown by Pulsed Laser Deposition
Materials Today Proceedings·2018· 19 cited
Exploration of Trap Levels in GaN and Al 0.2 Ga 0.8 N Layers by Temperature-Dependent Photoconductivity Measurement
Materials Today Proceedings·2018· 2 cited
Electronic structure of the PLD grown mixed phase MoS2/GaN interface and its thermal annealing effect
Current Applied Physics·2017· 19 cited
Emerging photoluminescence from bilayer large-area 2D MoS2 films grown by pulsed laser deposition on different substrates
Journal of Applied Physics·2017· 41 cited
Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes
Applied Physics Letters·2016· 107 citedOpen Access
The impact of RF-plasma power in carrier relaxation dynamics of unintentional doped GaN epitaxial layers grown by MBE
Optical Materials·2016· 4 cited
Effect of substrate nitridation temperature on the persistent photoconductivity of unintentionally-doped GaN layer grown by PAMBE
AIP conference proceedings·2016
Photoresponse of Epitaxial GaN Films Grown by Plasma-Assisted Molecular Beam Epitaxy
World Academy of Science, Engineering and Technology, International Journal of Chemical and Molecular Engineering·2015
In silico exploration of novel phytoligands against probable drug target of Clostridium tetani
Interdisciplinary Sciences Computational Life Sciences·2012· 5 cited

Frequent Co-authors

Prabir Pal(16), Suraj P. Khanna(15), Gaurav Kumar(11), Arun Barvat(10), Manjri Singh(9), Surinder P. Singh(8), Kritika Anand(5), Dilip K. Singh(4), Anjana Dogra(4), Biswarup Satpati(2), Sonachand Adhikari(2), B. Choursia(2), Colin T Hastings(2), T T Kuo(2), Kenneth H. Buetow(2), Melissa A. Wilson(2), Clara Curiel‐Lewandrowski(2), H.‐H. Sherry Chow(2), Bonnie LaFleur(2), Karen Taraszka Hastings(2)