О. Е. Терещенко

Novosibirsk State University — Russia

Physics and Astronomy · Physical Sciences

34h-index4.6kcitations313works1.32yr avg
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Research Topics

Topological Materials and Phenomena(169), Graphene research and applications(65), Advanced Condensed Matter Physics(56), 2D Materials and Applications(40), Semiconductor Quantum Structures and Devices(38)

Publications313 total

Revealing the (111) surface electronic structure of epitaxially grown Na2KSb photocathode
SSRN Electronic Journal·2026Open Access
On the interconnection between products formed by dissociative electron attachment to gas-phase abscisic acid and its microbial (but not plants) metabolic pathways
The Journal of Chemical Physics·2025
Electronic localization on the structural inhomogeneities formed due to Bi and Te deficiency in the MBE grown films of AF topological insulator MnBi2Te4: Evidence from spectroscopic ellipsometry and infrared studies
The Journal of Chemical Physics·2025
Electronic, magneto-optical, and magnetotransport properties of the topological insulator <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi mathvariant="normal">Sb</mml:mi> <mml:mn>2</mml:mn> </mml:msub> <mml:msub> <mml:mi mathvariant="normal">Te</mml:mi> <mml:mn>2</mml:mn> </mml:msub> <mml:mi>Se</mml:mi> </mml:mrow> </mml:math>
Physical review. B./Physical review. B·2025
Subthermal Mean Transverse Energies Induced by Electron Refraction on the Jump in Mass at the Surface of Multialkali Photocathodes
arXiv (Cornell University)·2025Open Access
Electronic structure of the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi mathvariant="normal">Bi</mml:mi> <mml:mn>2</mml:mn> </mml:msub> <mml:msub> <mml:mi mathvariant="normal">Te</mml:mi> <mml:mn>3</mml:mn> </mml:msub> </mml:math> non-van der Waals surface
Physical review. B./Physical review. B·2025
Effect of indium embedding on molecular-beam epitaxial growth of Pb1−xSnxTe
Applied Physics Letters·2025
Structural phase transition in crystalline HgSe: Low-temperature and high-pressure Raman spectroscopic investigation
Journal of Physics and Chemistry of Solids·2025· 2 cited
Growth of bulk crystals of magnetic topological insulators under peritectic conditions
Materials Chemistry and Physics·2025
Anharmonicity of Phonon Modes in MBE‐Grown Bi <sub>2</sub> Te <sub>3</sub> Thin Films: A Temperature‐Dependent Raman Study
Journal of Raman Spectroscopy·2025· 1 cited
Chemically prepared tellurium layer on PbSnTe films: passivation and oxidation properties
Surfaces and Interfaces·2025
Surface Fermi level tuning in thin epitaxial Bi<i>y</i>Sb2−<i>y</i>Te3−<i>x</i>Se<i>x</i>/Si(111) films
Applied Physics Letters·2025
Electronic structure of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mrow><mml:mo>(</mml:mo><mml:msub><mml:mi>Mn</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Pb</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mo>)</mml:mo></mml:mrow><mml:msub><mml:mi>Bi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math>: Experimental evidence of topological phase transition
Physical Review Research·2025· 1 citedOpen Access
Direct Spin-Imaging Detector Based on Freestanding Magnetic Nanomembranes
Physical Review Letters·2025· 1 cited
Probing the interaction between topological and Rashba-like surface states in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>MnBi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math> through Sn doping
Physical review. B./Physical review. B·2025· 3 cited
Spin texture tunability in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Mn</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Ge</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi>Bi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math> through varying Ge concentration
Physical review. B./Physical review. B·2025· 1 cited
Determination of the Verdet constant in the topological insulator Bi1.1Sb0.9Te2S
Materials Letters·2025
Chemical Composition Dependent Raman Scattering Spectroscopy of MBE Grown Manganese ‐ Based Bismuth Telluride Topological Insulator Thin Films
Journal of Raman Spectroscopy·2025· 1 citedOpen Access
Splitting of the absorption edge in the topological insulator Bi<sub>1.1</sub>Sb<sub>0.9</sub>Te<sub>2</sub>S: mid-infrared magneto-optical study
Journal of Physics D Applied Physics·2025· 1 citedOpen Access
Microscopic mechanism of displacive excitation of coherent phonons in a bulk Rashba semiconductor
Physical review. B./Physical review. B·2025· 2 citedOpen Access
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Frequent Co-authors

К. А. Кох(38), Е. В. Чулков(20), С. В. Еремеев(12), A. Kimura(11), V. A. Golyashov(9), M. Bode(8), Paolo Sessi(7), Thomas Bathon(7), Ziya S. Aliev(6), М. Б. Бабанлы(6), A. M. Shikin(6), A. S. Terekhov(6), И. И. Климовских(5), M. M. Otrokov(5), D. A. Estyunin(5), I. P. Rusinov(5), J. Güdde(4), U. Höfer(4), А. Г. Рыбкин(4), Nazim Mamedov(4)