D. Seghier

NDT Consultants (United Kingdom) — United Kingdom

Engineering · Physical Sciences

11h-index576citations64works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor materials and devices(31), Semiconductor Quantum Structures and Devices(24), GaN-based semiconductor devices and materials(24), ZnO doping and properties(15), Semiconductor materials and interfaces(12)

Publications64 total

Gathering dust: a new technique for rapid measurement of magnetic fluid concentration
Proceedings of the Annual British Conference on Non-Destructive Testing·2025
Towards safe inspection of long weld lines on ship hulls using an autonomous robot
2018· 5 citedOpen Access
Surface passivation of semiconducting oxides by self-assembled nanoparticles
Scientific Reports·2016· 15 citedOpen Access
Recrystallization of Highly-Mismatched Be<sub><i>x</i></sub>Zn<sub>1–<i>x</i></sub>O Alloys: Formation of a Degenerate Interface
ACS Applied Materials & Interfaces·2014· 3 cited
Pinning effect on the band gap modulation of crystalline Be<sub>x</sub>Zn<sub>1−x</sub>O alloy films grown on Al<sub>2</sub>O<sub>3</sub>(0001)
CrystEngComm·2014· 7 cited
Ferromagnetism and point defects in ZnCoO
Physica Scripta·2012· 5 cited
Effects of cobalt doping on the electrical properties of MBE-grown ZnO
Journal of Materials Science Materials in Electronics·2011· 8 cited
On intrinsic defects in Co-doped ZnO thin films
Physica Scripta·2010· 2 cited
Optical quenching of photoconductivity in AlxGa1−xN epilayers
Physica B Condensed Matter·2009· 1 cited
On the oxygen vacancy in Co-doped ZnO thin films
Physica B Condensed Matter·2009· 11 cited
Characterization of photoconductivity in Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N materials
Journal of Physics D Applied Physics·2009· 10 cited
Opto-electrical characterization of electrically active point defects in Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N
Journal of Physics D Applied Physics·2008· 3 cited
Shallow and deep donors in n-type ZnO characterized by admittance spectroscopy
Journal of Materials Science Materials in Electronics·2007· 24 cited
Characterization of donor states in ZnO
Physica B Condensed Matter·2007· 13 cited
Shallow and deep defects in Al Ga1−N structures
Physica B Condensed Matter·2007· 5 cited
Dx-like defects in AlGaN/GaN structures by means of noise spectroscopy
Materials Science in Semiconductor Processing·2006· 2 cited
Noise spectroscopy on defects with thermally activated capture in GaAs
Materials Science in Semiconductor Processing·2006
Gallium and nitrogen vacancies in GaN: Impurity decoration effects
Physica B Condensed Matter·2006· 25 cited
Investigation of deep defects using generation-recombination noise
Optica Applicata·2006
Noise and its correlation to deep defects in Mg-doped GaN
Journal of Physics D Applied Physics·2005· 2 cited
page 1 of 4Next →

Frequent Co-authors

H. P. Gíslason(35), T. Benyattou(6), G. Guillot(5), K. A. Prior(5), B.C. Cavenett(5), I. Hauksson(4), R. Moncorgé(3), Pierre Galtier(3), M. N. Charasse(3), B. Lambert(3), Daesung Park(3), Marc Walker(3), Chel‐Jong Choi(3), C. F. McConville(3), S. Hautakangas(2), K. Saarinen(2), L. Liszkay(2), Adel Kalboussi(2), S. Monéger(2), G. Marrakchi(2)