Ronald D. Schrimpf

Vanderbilt University — United States

Engineering · Physical Sciences

79h-index24.7kcitations950works4.02yr avg
OpenAlex↗ORCID↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor materials and devices(611), Radiation Effects in Electronics(463), Advancements in Semiconductor Devices and Circuit Design(355), Integrated Circuits and Semiconductor Failure Analysis(267), VLSI and Analog Circuit Testing(85)

Publications950 total

Impact of Hot Carriers on Track Structure Formation When Modeling Single-Event Effects in FinFETs
IEEE Transactions on Nuclear Science·2026Open Access
Low-frequency noise characteristics of waveguide-integrated lateral and vertical Ge-on-Si p–i–n photodiodes
Journal of Applied Physics·2025Open Access
Electric field-induced carrier recovery and thermal stability of radiation-induced defects in β-Ga2O3
APL Materials·2025· 2 citedOpen Access
Online Small-Sat Knowledge Repositories and Modeling Tools for Risk Reduction and Enhanced Mission Success
Digital Commons - USU (Utah State University)·2025Open Access
Connecting Mission Profiles and Radiation Vulnerability Assessment
Digital Commons - USU (Utah State University)·2025Open Access
Errata to “Effectiveness of NIEL as a Predictor of Single-Event Displacement Damage Effects in CMOS Circuits”
IEEE Transactions on Nuclear Science·2025
Effects of Epitaxial Layer Thickness on Heavy Ion-Induced Single-Event Burnout in Vertical β-Ga₂O₃ Schottky Barrier Diodes
IEEE Transactions on Nuclear Science·2025· 3 citedOpen Access
Effects of Incident Angle on Single-Event Leakage Current Degradation in Heavy-Ion Irradiated 1800- and 4500-V SiC Power MOSFETs
IEEE Transactions on Nuclear Science·2025Open Access
Heavy Ion-Induced Single-Event Leakage Current and Burnout in Homojunction GaN p-i-n Diodes
IEEE Transactions on Nuclear Science·2025· 5 citedOpen Access
Threshold Voltage Hysteresis and Gate Leakage in AlGaN/GaN HEMTs
IEEE Transactions on Nuclear Science·2025· 2 citedOpen Access
(Ultra)wide-bandgap semiconductors for extreme environment electronics
Applied Physics Letters·2025· 3 citedOpen Access
Physical Model for SiC Power Device Heavy-Ion Burnout Based on Pre-Strike Depletion Capacitance Energy Storage
IEEE Transactions on Nuclear Science·2025· 6 cited
Displacement Damage and Ionization Effects on Waveguide-Integrated Germanium-Silicon p-i-n Photodiodes
IEEE Transactions on Nuclear Science·2025· 2 cited
Heavy Ion-Induced Degradation in Gallium Nitride High Electron Mobility Transistors
IEEE Transactions on Nuclear Science·2025Open Access
Bias and Geometry Dependent Ionization Effects on Waveguide-Integrated Germanium-on-Silicon p-i-n Photodiodes
IEEE Transactions on Nuclear Science·2025Open Access
Fundamental Mechanisms of Total-Ionizing-Dose Degradation in Waveguide-Coupled Germanium-on-Silicon p-i-n Photodiodes
IEEE Transactions on Nuclear Science·2025
Physical Models for Epitaxial Doping Dependence of Single-Event Leakage Current in SiC Power Devices
IEEE Transactions on Nuclear Science·2025Open Access
Effectiveness of NIEL as a Predictor of Single-Event Displacement Damage Effects in CMOS Circuits
IEEE Transactions on Nuclear Science·2024· 3 citedOpen Access
Erratum: “Atomic-displacement threshold energies and defect generation in irradiated <i>β</i>-Ga2O3: A first-principles investigation” [J. Appl. Phys. 133, 015703 (2023)]
Journal of Applied Physics·2024
Temperature dependence of the low-frequency noise in AlGaN/GaN fin field effect transistors
Journal of Applied Physics·2024· 1 citedOpen Access
page 1 of 48Next →

Frequent Co-authors

Daniel M. Fleetwood(31), Sokrates T. Pantelides(13), R.L. Pease(9), Robert A. Weller(9), Robert A. Reed(9), W.E. Combs(7), K.F. Galloway(7), Arthur F. Witulski(6), L. W. Massengill(6), Marcus H. Mendenhall(6), Brian D. Sierawski(6), R.N. Nowlin(5), Kevin M. Warren(5), Michael L. Alles(4), Andrew L. Sternberg(4), Sergey N. Rashkeev(4), S.C. Witczak(4), Jonathan A. Pellish(4), J.R. Schwank(4), J. Félix(4)