C. K. Maiti

National Institute of Pharmaceutical Education and Research — India

Engineering · Physical Sciences

28h-index3.4kcitations423works0.72yr avg
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Research Topics

Semiconductor materials and devices(278), Advancements in Semiconductor Devices and Circuit Design(189), Semiconductor materials and interfaces(122), Integrated Circuits and Semiconductor Failure Analysis(99), Silicon and Solar Cell Technologies(41)

Publications423 total

Strain-engineered light emitting diodes: a pathway to enhanced radiative efficiency and tunable optoelectronic performance
Discover Electronics·2025· 2 citedOpen Access
Deformation-aware design of flexible strained-SiGe channel TFTs
Discover Electronics·2025Open Access
Analysis of Stress and Strain Dynamics in Sub-7nm GAA Si- and SiGe-Channel Nanosheet FETs
2024· 1 cited
Mapping Stress/Strain in Nanoscale FinFETs: Implications for Device Design
2024
Defect Characterization of HfTiOx Gate Dielectrics on SiGe Heterolayers Using Inelastic Tunneling Spectroscopy
Journal of Electronic Materials·2024· 1 cited
Strain Engineering for Highly Scaled<scp>MOSFETs</scp>
2024· 1 citedOpen Access
Stress Dependent Electrical Characteristics of Flexible a-IGZO TFTs
Springer proceedings in physics·2024
IOT based performance display system using ESP32: design and development
Journal of Physics Conference Series·2023· 2 citedOpen Access
An overview of nanoscale device fabrication technology—part I
Elsevier eBooks·2023· 1 cited
An Efficient and Secure Method of Plaintext-Based Image Encryption Using Fibonacci and Tribonacci Transformations
IEEE Access·2023· 11 citedOpen Access
List of contributors
Elsevier eBooks·2023
III-Nitride Flexible Electronic Devices
2022
FDSOI RF Flexible Electronics
2022
Fabless Semiconductor Manufacturing
2022· 2 cited
Simulation Environment
2022
A blind audio watermarking based on singular value decomposition and quantization
International Journal of Speech Technology·2022· 6 cited
Experimental and simulation study of charge transport mechanism in HfTiOx high-k gate dielectric on SiGe heterolayers
Bulletin of Materials Science·2022· 5 cited
Strain-engineering in AlGaN/GaN HEMTs: impact of silicon nitride passivation layer on electrical performance
Physica Scripta·2021· 10 cited
Stress Enhanced Performance Analysis for Trigate FinFETs at 7nm Node
2021 International Conference in Advances in Power, Signal, and Information Technology (APSIT)·2021· 2 cited
Investigation of Work Function Variation on the Electrical Performance of sub-7nm GAA FETs
2021 Devices for Integrated Circuit (DevIC)·2021· 3 cited
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Frequent Co-authors

M. K. Bera(11), Goutam Kumar Dalapati(11), S. K. Ray(9), S.K. Samanta(8), Somenath Chatterjee(8), C. Mahata(8), L. K. Bera(7), Sudipto Chakraborty(6), P. K. Bose(6), Mrinal K. Hota(5), Sanatan Chattopadhyay(5), Sourav Nandi(5), Deepak Kumar Nayak(4), Tanmoy Das(4), C. K. Chia(4), Sing Yang Chiam(4), E. Mohapatra(4), Taraprasanna Dash(4), J. Jena(4), Sanghamitra Das(4)