J. H. Stathis

Engineering · Physical Sciences

51h-index9.1kcitations200works0.02yr avg
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Research Topics

Semiconductor materials and devices(170), Advancements in Semiconductor Devices and Circuit Design(120), Integrated Circuits and Semiconductor Failure Analysis(71), Ferroelectric and Negative Capacitance Devices(29), Thin-Film Transistor Technologies(20)

Publications200 total

BAT Framework Modeling of RMG HKMG Si and SiGe Channel FinFETs
2021· 2 cited
BAT Framework Modeling of RMG HKMG SOI FinFETs
2021
Fundamental roles of extreme-value distributions in dielectric breakdown and memory applications (minimum-value versus maximum-value statistics)
Japanese Journal of Applied Physics·2020· 10 citedOpen Access
Special Issue on Reliability
IEEE Transactions on Electron Devices·2019· 2 citedOpen Access
Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor
2019· 25 cited
On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs
2019· 8 cited
Comprehensive Methodology for Multiple Spots Competing Progressive Breakdown for BEOL/FEOL Applications
2019· 1 cited
Long Term NBTI Relaxation Under AC and DC Biased Stress and Recovery
2019· 3 cited
Modeling of NBTI Kinetics in RMG Si and SiGe FinFETs, Part-I: DC Stress and Recovery
IEEE Transactions on Electron Devices·2018· 51 cited
Modeling of NBTI Kinetics in Replacement Metal Gate Si and SiGe FinFETs—Part-II: AC Stress and Recovery
IEEE Transactions on Electron Devices·2018· 27 cited
Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with I<inf>d</inf>-V<inf>d</inf> characteristics
2018· 10 cited
Elapsed-time statistics of successive breakdown in the presence of variability for dielectric breakdown in BEOL/MOL/FEOL applications
2018· 1 cited
The physics of NBTI: What do we really know?
2018· 18 cited
Controversial issues in negative bias temperature instability
Microelectronics Reliability·2018· 94 cited
A comparative study of strain and Ge content in Si<inf>1−x</inf>Ge<inf>x</inf> channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
2017· 24 cited
Fundamental limitations of existing models and future solutions for dielectric reliability and RRAM applications (invited)
2017· 5 cited
Modeling of NBTI time kinetics and T dependence of VAF in SiGe p-FinFETs
2017· 28 cited
Ultrafast Measurements and Physical Modeling of NBTI Stress and Recovery in RMG FinFETs Under Diverse DC–AC Experimental Conditions
IEEE Transactions on Electron Devices·2017· 68 cited
Hot carrier reliability in ultra-scaled sige channel p-FinFETs
2017· 1 cited
Electron energy dissipation model of gate dielectric progressive breakdown in n- and p-channel field effect transistors
Journal of Applied Physics·2017· 17 cited
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Frequent Co-authors

B.P. Linder(10), E. Cartier(9), D. J. DiMaria(8), Sufi Zafar(7), Vijay Narayanan(6), Vamsi Paruchuri(6), S. Lombardo(4), B. Doris(4), M. Chudzik(4), A. Vayshenker(4), H. Bu(4), R. Divakaruni(4), Mukesh Khare(4), M. A. Kastner(3), Ernest Y. Wu(3), R. Rodrı́guez(3), Dechao Guo(3), P. Montanini(3), Richard G. Southwick(3), H. Jagannathan(3)