G.D. Henshall

Engineering · Physical Sciences

13h-index488citations38works0.02yr avg
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Research Topics

Semiconductor Lasers and Optical Devices(31), Semiconductor Quantum Structures and Devices(28), Photonic and Optical Devices(14), Solid State Laser Technologies(11), Spectroscopy and Laser Applications(10)

Publications38 total

Growth and assessment of GaInP/GaAs/GaInAs quantum well lasers
1993
1480 nm pumps for optical fibre amplifiers
1992
Growth and assessment of InGaAs/InGaAlAs/InP multiple quantum well lasers
Journal of Crystal Growth·1991· 17 cited
Electro-optic modulation of 1.5μm light in an active InGaAsP/InP quantum well waveguide
Cambridge University Engineering Department Publications Database·1990
High power operation of GaInAsP/GaInAs MQW ridge lasers emitting at 1.48 μm
Electronics Letters·1990· 7 cited
Low residual reflectivity of angled-facet semiconductor laser amplifiers
IEEE Photonics Technology Letters·1990· 25 cited
Long wavelength InGaAsP/InGaAs and InGaAlAs/InGaAs MQW SCH lasers
1990
A 5×5 monolithic InGaAs/InP multiple quantum well spatial light modulator array
Semiconductor Science and Technology·1990· 4 cited
High performance 10/sup 0/ angle-facet laser amplifiers
1990· 2 cited
Temperature-dependent gain and noise of 1.5 μm laser amplifiers
Electronics Letters·1989· 14 cited
Selectively contacted In1-xGaxAsyP1-y electroabsorption modulators with low operating voltages
Optical Fiber Communication Conference·1989
High reliability low-threshold InGaAsP ridge waveguide lasers emitting at 1.3 mu m
Journal of Lightwave Technology·1988· 9 cited
Pressure dependence of threshold current and carrier lifetime in 1.55 μm GaInAsP lasers
Electronics Letters·1987· 2 cited
High-reliability low-threshold InGaAsP ridge waveguide lasers emitting at 1.3μm
1987
High-power operation of DCPBH lasers emitting at 1.52 μm wavelength
Electronics Letters·1985· 4 cited
Influence of pressure on temperature sensitivity of Ga <sub> <i>x</i> </sub> In <sub> 1− <i>x</i> </sub> As <sub> <i>y</i> </sub> P <sub> 1− <i>y</i> </sub> lasers
Electronics Letters·1982· 6 cited
Pressure dependence of threshold current in Ga <sub> <i>x</i> </sub> In <sub> 1− <i>x</i> </sub> As <sub> <i>y</i> </sub> P <sub> 1− <i>y</i> </sub> lasers
Electronics Letters·1982· 24 cited
Forward bias voltage characteristics for (GaAl)as and (GaIn) (AsP) lasers
IEE Proceedings I Solid State and Electron Devices·1982· 4 cited
Properties of inverted rib-waveguide lasers operating at 1.3 μm wavelength
Electronics Letters·1981· 29 cited
Narrow-stripe injection lasers in GaInAsP/InP
IEEE Journal of Quantum Electronics·1981· 9 cited
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Frequent Co-authors

P.D. Greene(15), G.H.B. Thompson(9), J.E.A. Whiteaway(9), A.J. Collar(6), P.A. Kirkby(5), P.R. Selway(4), R.W. Glew(4), B. Mikkelsen(3), K.E. Stubkjaer(3), C.M. Lowney(3), B. S. Bhumbra(3), Jean A. Farre(2), L. Eskildsen(2), D.S. Olesen(2), D. Patel(2), A.R. Adams(2), B. Garrett(2), Z. Wang(2), Daniel Renner(2), T. E. Stockton(2)