A. Grill

Micron (United States) — United States

Engineering · Physical Sciences

52h-index14.6kcitations259works0.02yr avg
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Research Topics

Semiconductor materials and devices(94), Copper Interconnects and Reliability(81), Metal and Thin Film Mechanics(80), Diamond and Carbon-based Materials Research(68), Graphene research and applications(23)

Publications259 total

IEDM 2019 Career Luncheon
2019Open Access
Optimal Filler Sizes for Thermal Interface Materials
2019· 7 cited
Extreme-low k porous pSiCOH dielectrics prepared by PECVD
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2017· 21 cited
Quantitative Electron Energy Loss Spectroscopy (EELS) Analysis of Flowable CVD Oxide for Shallow Trench Isolation of finFET Integration
Microscopy and Microanalysis·2017Open Access
Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node
2017· 30 cited
SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH: Reactive ion etching and dielectric recovery
Applied Physics Letters·2017· 7 cited
Advanced single precursor based pSiCOH k = 2.4 for ULSI interconnects
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2017· 15 cited
Ultrathin conformal multilayer SiNO dielectric cap for capacitance reduction in Cu/low k interconnects
2016· 1 cited
Post porosity plasma protection integration at 48 nm pitch
2016· 1 cited
PECVD low and ultralow dielectric constant materials: From invention and research to products
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2016· 65 cited
SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH
Journal of Applied Physics·2016· 11 cited
Highly Robust Advanced Single Precursor Based k 2.4 ILD for Beol Cu Interconnects
ECS Meeting Abstracts·2015· 1 cited
Optimizing ULK film properties to enable BEOL integration with TDDB reliability
2015· 3 cited
Induced e-beam charge impact on spatial orientation of gate-all-around silicon wires device fabricated on boron nitride substrate
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2015
Selective manganese deposition for CU_low k nano device interconnect
Digital Access to Scholarship at Harvard (DASH) (Harvard University)·2015Open Access
Advanced metal and dielectric barrier cap films for Cu low k interconnects
2014· 13 cited
CD-SEM metrology evaluation of gate-all-around Si nanowire MOSFET with improved control of nanowire suspension by using a buried boron nitride etch-stop layer
2014
Effect of low-frequency radio frequency on plasma-enhanced chemical vapor deposited ultra low-κ dielectric films for very large-scale integrated interconnects
Journal of Applied Physics·2014· 14 cited
Ultrathin (8-14 nm) Conformal SiN for sub-20 nm Copper/Low-k Interconnects
ECS Meeting Abstracts·2014
Ultrathin (8-14 nm) Conformal SiN for sub-20 nm Copper/Low-k Interconnects
ECS Transactions·2014· 1 cited
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Frequent Co-authors

V. Patel(17), Christophe Donnet(8), J.-C. Fontaine(6), M. Belin(5), C. Jahnes(5), B.S. Meyerson(5), Christos Dimitrakopoulos(4), Thierry Le Mogne(4), Yu-Ming Lin(3), Damon B. Farmer(3), Phaedon Avouris(3), S. M. Gates(3), K.A. Jenkins(2), Yanqing Wu(2), K. L. Saenger(2), Steven J. Koester(2), J. O. Chu(2), M. Hargrove(2), J. A. Ott(2), L. Ponsonnet(2)