P. Wolfram

Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute — Germany

Physics and Astronomy · Physical Sciences

9h-index174citations24works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(14), Photonic and Optical Devices(14), Semiconductor Lasers and Optical Devices(14), Advanced Photonic Communication Systems(5), Advanced Semiconductor Detectors and Materials(4)

Publications24 total

Routine growth of InP based device structures using process calibration with optical in-situ techniques
Journal of Crystal Growth·2004· 13 cited
Potential of on-line MOVPE reproducibility control of 1.3 μm laser structures by optical in-situ measurements
2003
MOVPE-based in-situ etching of InP epitaxial heterostructures
2003
Growth of InGaAsP/InP-laser structures monitored by using RAS techniques
Journal of Crystal Growth·2002· 12 cited
Surface quality of InP etched with tertiarybutylchloride in an MOVPE reactor
Journal of Crystal Growth·2002· 9 cited
27 GHz bandwidth integrated photoreceiver comprising a waveguide fed photodiode and a GaInAs/AlInAs-HEMT based travelling wave amplifier
2002· 4 cited
27 GHz bandwidth high speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET-traveling wave amplifier
2002· 3 cited
Fabrication of InGaAsP/InP ridge waveguide lasers with dry etched facets using chemically assisted ion beam etching and a simple photoresist mask
2002· 1 cited
40 Gbit/s eye pattern of a photoreceiver OEIC with monolithically integrated spot size converter
2002· 9 cited
Impact of a conducting interface layer on the characteristics of integrated InP photoreceivers
2002
40 GBIT/S EYEPATTERN OF A PHOTORECEIVER OEIC WITH MONOLITHICALLY INTEGRATED SPOT SIZE CONVERTER
Optical Fiber Communication Conference and International Conference on Quantum Information·2001· 6 cited
MOVPE-based in situ etching of In(GaAs)P/InP using tertiarybutylchloride
Journal of Crystal Growth·2000· 14 cited
27-GHz bandwidth high-speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET traveling wave amplifier
IEEE Journal of Solid-State Circuits·1997· 31 cited
Design and realisation of waveguide integrated AlInAs/GaInAsHEMTsregrown by MBE for high bit rate optoelectronic receivers on InP
Electronics Letters·1996· 4 cited
Electrically switchable self-pulsations in integratable multisection DFB-lasers
IEEE Photonics Technology Letters·1996· 11 cited
Ultrafast GaInAs/AlInAs/InP photoreceiver based on waveguide architecture
Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft)·1996· 2 cited
The consequences of dislocations and thermal degradation on the quality of InGaAsP/InP epitaxial layers
Materials Science and Engineering B·1991· 2 cited
Optical thickness mapping of InGaAsP/InP layers
Journal of Applied Physics·1991· 2 cited
Lasing characteristics of InGaAs/InGaAsP MQW structures grown by low-pressure MOVPE
Journal of Crystal Growth·1991· 5 cited
Doping and diffusion behaviour of Fe in MOVPE grown InP layers
Journal of Crystal Growth·1990· 14 cited
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Frequent Co-authors

W. Ebert(11), G.G. Mekonnen(8), W. Schlaak(8), C. Schramm(8), A. Umbach(7), W. Passenberg(7), G. Unterbörsch(7), N. Grote(6), H.‐G. Bach(6), D. Franke(5), Stefan van Waasen(4), U. Auer(4), R.M. Bertenburg(4), R. Reuter(4), F. Reier(4), B. Sartorius(4), G. Janßen(3), Herbert Schumann(3), E. Steimetz(3), J.‐T. Zettler(3)