Sang‐Hee Ko Park

Korea Advanced Institute of Science and Technology — South Korea

Engineering · Physical Sciences

41h-index6.5kcitations246works3.42yr avg
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Research Topics

Thin-Film Transistor Technologies(177), ZnO doping and properties(90), Semiconductor materials and devices(87), Transition Metal Oxide Nanomaterials(31), Silicon and Solar Cell Technologies(30)

Publications246 total

High-Mobility IZO Thin-Film Transistors Enabled by Precise Hydrogen Control Using a SiO <sub>2</sub> –Al <sub>2</sub> O <sub>3</sub> Supercycle via Plasma-Enhanced Atomic Layer Deposition
ACS Applied Materials & Interfaces·2025
Atomic layer deposition-enabled trench oxide thin-film transistors with selective dry etching for high-current driving applications
Journal of Alloys and Compounds·2025· 2 cited
Low-Temperature (450 <sup>∘</sup>C) Crystallization of Al:HfO<sub>2</sub> Ferroelectric Thin Films Enabled by Microwave Annealing Process
IEEE Transactions on Electron Devices·2025
Optical characteristics of passivation layers for ultra-low-loss on-chip devices in the mid-infrared
APL Materials·2025Open Access
Spatially Correlated Oxygen Vacancies, Electrons and Conducting Paths in TiO<sub>2</sub> Thin Films
ACS Applied Materials & Interfaces·2025
Optimized hydrogen-supplying gate insulator for high-mobility indium oxide TFTs via atomic-level oxygen reactant engineering
Journal of Alloys and Compounds·2025· 5 cited
Surface passivation of natural photosystem-based photoelectrode for efficient and sustainable bio-photovoltaic applications
Journal of Industrial and Engineering Chemistry·2025· 2 cited
Ultrathin flexible pressure sensors using microbead embedded nanofibrous membrane for wearable applications
Journal of Alloys and Compounds·2025· 8 cited
Optimizing De-Trap Pulses in Gate-Injection Type Ferroelectric NAND Cells to Minimize Read After Write Delay Issue
IEEE Electron Device Letters·2024· 2 cited
High Mobility, Low Off-Current, and Flexible Fiber-Based a-InGaZnO Thin-Film Transistors toward Wearable Textile OLED Displays
ACS Applied Materials & Interfaces·2024· 13 cited
Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO₂ Film by Fast Ramping and Fast Cooling Process
IEEE Transactions on Electron Devices·2024· 3 cited
Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric–Insulator-Si (MFIS) FeFET
IEEE Transactions on Electron Devices·2024· 8 cited
Positive Interaction Between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect Transistor
IEEE Electron Device Letters·2024· 2 cited
First Demonstration of Thermally Stable Zr:HfO<sub>2</sub> Ferroelectrics via Inserting AlN Interlayer
IEEE Electron Device Letters·2024· 6 cited
22‐1: <i>Invited Paper:</i> About a Trench Oxide TFT
SID Symposium Digest of Technical Papers·2024Open Access
Atomic layer deposition of multicomponent amorphous oxide semiconductors with sequential dosing of metal precursors
Materials Letters·2024· 5 cited
Upside–Down Annealing of Oxide Thin‐Film Transistors and its Analysis Using Hydrogen‐Diffusion Model
physica status solidi (a)·2024· 2 citedOpen Access
Modifying subgap states with hydrogen incorporation from source/drain alloys for oxide phototransistors
Materials Letters·2023· 1 cited
Engineering a Subnanometer Interface Tailoring Layer for Precise Hydrogen Incorporation and Defect Passivation for High-End Oxide Thin-Film Transistors
ACS Applied Materials & Interfaces·2023· 15 cited
Rapid and simultaneous multiple detection of a tripledemic using a dual-gate oxide semiconductor thin-film transistor-based immunosensor
Biosensors and Bioelectronics·2023· 7 cited
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Frequent Co-authors

Chi‐Sun Hwang(31), Shinhyuk Yang(17), Min Ki Ryu(11), Hye Yong Chu(9), Jae Kyeong Jeong(7), Chun‐Won Byun(7), Himchan Oh(6), Sung‐Min Yoon(6), Min‐Ki Ryu(6), Doo‐Hee Cho(5), Hye‐In Yeom(5), Yunyong Nam(5), Sanghun Jeon(4), Woo‐Seok Cheong(4), Jin Jang(4), Jeong-Ik Lee(4), Kyoung Ik Cho(4), Jae‐Heon Shin(3), Sung Min Yoon(3), Jingyu Kim(3)