M. Martin

Institut polytechnique de Grenoble — France

Engineering · Physical Sciences

22h-index1.6kcitations159works0.72yr avg
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Research Topics

Semiconductor materials and devices(50), Semiconductor Quantum Structures and Devices(48), Photonic and Optical Devices(31), Nanowire Synthesis and Applications(25), Integrated Circuits and Semiconductor Failure Analysis(23)

Publications159 total

InAs/InAlGaAs Quantum Dot Lasers on InP and Si
IEEE Journal of Selected Topics in Quantum Electronics·2025Open Access
The Aerosol Jet Printing of Ultra-Light, Ultra-Thin, and Flexible Customized Wearable Strain Gauges to Evaluate Body Behavior and Health Condition for Astronauts
2025
Low-Temperature Sintering Study for Aerosol-Jet Printed Flexible Electronics Across Diverse Substrates
Lecture notes in mechanical engineering·2025
Scalable InAs/InGaAs DWELL structures for broadband infrared emission spanning the E- to O-band
Scientific Reports·2025Open Access
Study of In0.53Ga0.47As/InP interface in III–V heterostructures by coupling monoatomic argon sputtering and high-energy x-ray photoelectron spectroscopy
Journal of Applied Physics·2025· 1 citedOpen Access
Heteroepitaxy of GaAs on Ge buffered silicon substrates: Nucleation and crystalline defects
Journal of Crystal Growth·2025· 1 cited
Study of zinc doped In0.53Ga0.47As/InP/InAlAs/InP heterostructures by time-of-flight; magnetic secondary ion spectrometry and high-energy x-ray photoelectron spectroscopy
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2025· 1 citedOpen Access
940 nm Micro‐Light‐Emitting Diode Fabricated on Industry‐Compatible 300 mm Si (100) Substrate by Metal–Organic Chemical Vapor Deposition
Advanced Photonics Research·2025· 1 citedOpen Access
Low threshold InAs/InP quantum dot lasers on Si
2025· 1 cited
Scalable synthesis of InAs/InGaAs dots in WELL [DWELL] for infrared emission (Conference Presentation)
2025
T-REX-6G : Development of performant CMOS-compatible ohmic contacts for THz InP-HBT on Silicon technology
SPIRE - Sciences Po Institutional REpository·2025
Heteroepitaxy of Gaas on Ge Buffered Silicon Substrates: Nucleation and Crystalline Defects
SSRN Electronic Journal·2025Open Access
Toward Large Scale Production of III-VI 2D Materials and heterostructures by Pulsed MOCVD
SPIRE - Sciences Po Institutional REpository·2024
Study of In0.53Ga0.47As/ InP/InAlAs/InP heterostructures by ToF-SIMS and HAXPES
SPIRE - Sciences Po Institutional REpository·2024
Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon
Applied Physics Letters·2024· 4 citedOpen Access
Spectroscopic investigation of oxidation in GaSe 2D layered materials
Microelectronic Engineering·2024· 6 citedOpen Access
Core Facility Management: Crucial Skills & Strategies
Microscopy and Microanalysis·2024Open Access
Advanced optimization of C&O species adsorbed on highly reactive surfaces during vacuum transfer steps in microelectronic
SPIRE - Sciences Po Institutional REpository·2024
Étude de l'oxydation du séléniure de gallium (GaSe) à l'air : Approche XPS et Raman
SPIRE - Sciences Po Institutional REpository·2024
Monolithic integration of GaAs based compounds on silicon platform for photonic and optoelectronic devices
2024
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Frequent Co-authors

T. Baron(35), J. Moeyaert(12), F. Bassani(11), Siming Chen(10), Mingchu Tang(10), Huiyun Liu(10), Y. Bogumilowicz(8), Reynald Alcotte(6), R. Cipro(6), E. Pargon(6), E. Sánchez(5), Xinyu Bao(5), Zhaoyu Zhang(5), Sylvain David(4), Jean-Baptiste Pin(4), Mengya Liao(4), A.J. Seeds(4), Taojie Zhou(4), Tiphaine Cerba(4), V. Loup(4)