Trupti Ranjan Lenka

Texas Tech University — United States

Physics and Astronomy · Physical Sciences

26h-index2.6kcitations263works1.82yr avg
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Research Topics

GaN-based semiconductor devices and materials(145), Ga2O3 and related materials(119), ZnO doping and properties(82), Semiconductor materials and devices(52), Chalcogenide Semiconductor Thin Films(35)

Publications263 total

Thermal stability analysis of AlGaN/GaN HEMT with multiple quantum wells for emerging nanoelectronics
Microsystem Technologies·2026
Resilient high-temperature operation of GaN-on-SiC HEMTs with stable DC characteristics up to 600 °C
Microelectronics Journal·2025
Impact of Spacer on Transport Properties of Lattice Matched III-Nitride/β-Ga <sub>2</sub> O <sub>3</sub> HEMT
2025
A review on the evolution and outlook of E-mode III-nitride HEMTs: Comparative Insights into Architectures and performance
Micro and Nanostructures·2025· 1 cited
DC and RF Analysis of E-mode Single Quantum-Well AlGaN/GaN HEMT for Power Amplifier Application
2025
Performance Analysis of Normally-On AlGaN/GaN HEMT with Multiple Quantum Wells
2025
Enhanced Breakdown and RF Performance in Field-Plated AlGaN/GaN HEMT for High-Power Applications
arXiv (Cornell University)·2025Open Access
Modelling of AlGaN/GaN HEMT with and without Graded Multiple Quantum Wells for Quantum Computing Applications
2025
Modeling and Numerical Investigation of a Novel SPR Sensor for Detecting Alzheimer’s Diseases Using Brain Tissue Sample
2025
Preface for the special issue MNDCS-2025
Microsystem Technologies·2025Open Access
Preface for Special Issue MNDCS-2024
Microsystem Technologies·2025Open Access
Graphene-boron nitride-transition metal dichalcogenides heterostructure based MISFET
Micro and Nanostructures·2025
Sensor-Driven Soil Nutrient Prediction via Machine Learning
2025
A novel AlN/β-Ga2O3 high electron mobility transistor with 2 kV and 600 GHz operation
Microsystem Technologies·2025· 1 citedOpen Access
Prediction of Single Event Transient Propagation Using Machine Learning Models
2025Open Access
First-principle calculations of electronic and optical properties of Ca2TiSi(O1-xSx)6 and its alloys for use in solar cell application
Journal of Nanophotonics·2025· 1 cited
Polarization‐Induced Versus Delta‐Doped β‐<scp>Ga<sub>2</sub>O<sub>3</sub> HEMTs</scp>—A Performance Comparison
International Journal of Numerical Modelling Electronic Networks Devices and Fields·2025· 1 citedOpen Access
Polarization-induced doping in AlInN/GaN nanowire ultraviolet light-emitting diodes
Journal of Nanophotonics·2025· 1 cited
Lattice heat flow thermal modeling of recessed bridge-gate InAlGaN/GaN HEMT
Microsystem Technologies·2025· 5 citedOpen Access
Improved Linearity and Switching Performance of AlN/β-Ga<sub>2</sub>O<sub>3</sub> MOSHEMT using Al<sub>2</sub>O<sub>3</sub> Dielectric
2025
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Frequent Co-authors

Hieu Pham Trung Nguyen(11), Rajan Singh(8), Deepak Kumar Panda(8), Ravi Teja Velpula(7), Raghunandan Swain(7), Barsha Jain(6), Ha Quoc Thang Bui(6), K. Jena(6), G. Purnachandra Rao(6), Nour El I. Boukortt(5), А. К. Панда(4), Hoang‐Duy Nguyen(3), Ashutosh Srivastava(3), S. K. Tripathy(3), S. Vallisree(3), R. Thangavel(3), Srimanta Baishya(3), P. Susthitha Menon(3), G. Amarnath(3), Achinta Baidya(2)