M. Kamal‐Saadi

University of Surrey — United Kingdom

Physics and Astronomy · Physical Sciences

7h-index364citations15works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(14), Quantum and electron transport phenomena(6), GaN-based semiconductor devices and materials(5), Semiconductor materials and devices(3), Advancements in Semiconductor Devices and Circuit Design(3)

Publications15 total

Pressure and <i>k</i> · <i>p</i> studies of band parameters in dilute‐N GaInNAs/GaAs multiple quantum wells
physica status solidi (b)·2003· 6 cited
Electronic structure of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mi>y</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>y</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mo>/</mml:mo><mml:mi mathvariant="normal">GaAs</mml:mi></mml:math>multiple quantum wells in the dilute-<i>N</i>regime from pressure and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="bold">k</mml:mi><mml:mi>⋅</mml:mi><mml:mi mathvariant="bold">p</mml:mi></mml:math>studies
Physical review. B, Condensed matter·2002· 66 citedOpen Access
Tight-binding and k·p models for the electronic structure of Ga(In)NAs and related alloys
Semiconductor Science and Technology·2002· 147 cited
Auger recombination in long-wavelength infrared InNxSb1−x alloys
Applied Physics Letters·2001· 65 citedOpen Access
Effects of dilute nitrogen-alloying on the pressure dependence of interband transitions in InGaAsN/GaAs confinement structures
APS March Meeting Abstracts·2001
Effects of Confinement on the Coupling between Nitrogen and Band States in InGaAs1?xNx/GaAs (x ? 0.025) Structures: Pressure and Temperature Studies
physica status solidi (b)·2001· 13 cited
Grand canonical equilibrium of two-dimensional electrons confined in asymmetric<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">A</mml:mi><mml:mi mathvariant="normal">s</mml:mi><mml:mo>/</mml:mo><mml:mi mathvariant="normal">G</mml:mi><mml:mi mathvariant="normal">a</mml:mi><mml:mi mathvariant="normal">A</mml:mi><mml:mi mathvariant="normal">s</mml:mi></mml:math>heterostructures in a quantizing magnetic field
Physical review. B, Condensed matter·1999· 2 cited
Oscillations of 2D electron density in GaAs/Ga<sub>0.67</sub>Al<sub>0.33</sub>As heterostructures in the QHE regime
Semiconductor Science and Technology·1999· 11 cited
Suppression of LO phonon scattering in Landau quantized quantum dots
Physical review. B, Condensed matter·1999· 40 citedOpen Access
Landau-level lifetimes in PbTe nipi superlattices, PbTe/PbEuTe and InAs/AlSb quantum wells
Physica E Low-dimensional Systems and Nanostructures·1998· 2 cited
Non trivial behaviour of the photoluminescence transition intensities in a modulation doped GaAs/GaAlAs single quantum well in tilted magnetic field
Solid State Communications·1998· 1 cited
Landau Level Lifetimes in an InAs/AlSb Quantum Well Determined by a Picosecond Far-Infrared Pump-Probe Technique
physica status solidi (b)·1997· 2 cited
Landau level lifetimes in PbTe wide parabolic quantum wells
1997
Far infrared pump-probe determination of Landau level lifetimes in InAs/AlSb quantum wells
Physics of the Solid State·1997
Determination of the basic parameters of pseudomorphic GaInAs quantum wells by means of simultaneous transport and optical investigations
Solid-State Electronics·1994· 9 cited

Frequent Co-authors

B. N. Murdin(6), C. R. Pidgeon(6), A.R. Adams(5), C. M. Ciesla(5), C. J. G. M. Langerak(5), Stelios A. Choulis(4), T. J. C. Hosea(4), Eoin P. O’Reilly(4), R. A. Stradling(4), E. Gornik(4), A. Raymond(4), I. Elmezouar(3), B. Etienne(3), Andrew J. Lindsay(2), Stanko Tomić(2), B. A. Weinstein(2), Peter J. Klar(2), W. Stolz(2), B. A. Weinstein(2), B. Couzinet(2)