Péter Udvarhelyi

University of California, Los Angeles — United States

Materials Science · Physical Sciences

13h-index943citations48works2.82yr avg
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Research Topics

Diamond and Carbon-based Materials Research(26), Graphene research and applications(14), Silicon Nanostructures and Photoluminescence(10), Silicon Carbide Semiconductor Technologies(9), Electronic and Structural Properties of Oxides(9)

Publications48 total

Vanadium photoluminescence in 3C-SiC
Physical review. B./Physical review. B·2026Open Access
Ultranarrow Bright Single-Photon Emitters in Diamond with Strong Broadband Phonon Decoupling
arXiv (Cornell University)·2025Open Access
Non-invasive bioinert room-temperature quantum sensor from silicon carbide qubits
Nature Materials·2025Open Access
Robust Spin-Moiré-Superlattice-Driven Gap Opening in EuAg<sub>4</sub>Sb<sub>2</sub> under in-Plane Magnetic Field
Nano Letters·2025
Quantum-enhanced electric field mapping within semiconductor devices
Physical Review Applied·2025· 2 citedOpen Access
Twisted Bilayer Materials as a Promising Platform for Solid-State Qubits
Physical Review Letters·2025· 1 cited
Solid State Defect Emitters With no Electrical Activity
Advanced Science·2025· 2 citedOpen Access
Robust superzone gap opening in incommensurate antiferromagnetic semimetal EuAg$_4$Sb$_2$ under in-plane magnetic field
arXiv (Cornell University)·2025Open Access
Design for Telecom-Wavelength Quantum Emitters in Silicon Based on Alkali-Metal-Saturated Vacancy Complexes
ACS Nano·2025Open Access
Hopping of the Center-of-Mass of Single G Centers in Silicon-on-Insulator
Physical Review X·2024· 2 citedOpen Access
Solid-state qubits in moire superlattices
arXiv (Cornell University)·2024Open Access
All‐Epitaxial Self‐Assembly of Silicon Color Centers Confined Within Sub‐Nanometer Thin Layers Using Ultra‐Low Temperature Epitaxy
Advanced Materials·2024· 9 citedOpen Access
Design for telecom-wavelength quantum emitters in silicon based on alkali-metal-saturated vacancy complexes
arXiv (Cornell University)·2024Open Access
Precise Characterization of a Waveguide Fiber Interface in Silicon Carbide
ACS Photonics·2024· 12 citedOpen Access
Vacancy-related color centers in two-dimensional silicon carbide monolayers
Physical Review Materials·2024· 13 cited
Quantum communication networks with defects in silicon carbide
arXiv (Cornell University)·2024· 4 citedOpen Access
All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy
arXiv (Cornell University)·2024Open Access
Strain engineering for transition-metal defects in SiC
Physical review. B./Physical review. B·2024· 9 cited
Precise characterization of a silicon carbide waveguide fiber interface
arXiv (Cornell University)·2024Open Access
Strain Engineering for Transition Metal Defects in SiC
arXiv (Cornell University)·2023· 2 citedOpen Access
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Frequent Co-authors

Ádám Gali(36), Gergő Thiering(12), Prineha Narang(8), Song Li(7), Jawad Ul‐Hassan(6), Jörg Wrachtrup(6), Alrik Durand(6), V. Jacques(6), Nguyên Tiên Són(5), Florian Kaiser(5), Rainer Stöhr(5), Jean‐Michel Gérard(5), Guillaume Cassabois(5), Roland Nagy(4), Takeshi Ohshima(4), Guido Burkard(4), Anton Pershin(4), Péter Deák(4), Meysam Mohseni(4), Pei Li(4)