H. L. Au

University of Hong Kong — Hong Kong

Engineering · Physical Sciences

8h-index213citations14works0.02yr avg
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Research Topics

Muon and positron interactions and applications(9), Semiconductor materials and devices(6), Semiconductor materials and interfaces(5), Advancements in Battery Materials(4), Ammonia Synthesis and Nitrogen Reduction(4)

Publications14 total

Positron deep level transient spectroscopy — a new application of positron annihilation to semiconductor physics
Applied Surface Science·1997· 8 cited
Positron transport studies at the Au - (InP:Fe) interface
Journal of Physics Condensed Matter·1996
Temperature dependence of the ideality factor of GaAs and Si schottky diodes
physica status solidi (a)·1995· 27 cited
Positron Mobility and Interface Defect Studies in Semi-Insulating GaAs Using the Lifetime Technique
Materials science forum·1994
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>EL</mml:mi><mml:mn>2</mml:mn><mml:mn/></mml:math>Deep Donor State in Semi-Insulating GaAs Revealed by Frequency Dependent Positron Mobility Measurements
Physical Review Letters·1994· 11 cited
Semi-insulating GaAs: A possible substrate for a field-assisted positron moderator
Applied Physics A·1994· 28 cited
Numerical study of the decay of photovoltage at metal-semiconductor interfaces
Solid State Communications·1993· 1 cited
Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy
Physical review. B, Condensed matter·1993· 25 cited
The effect of the temperature dependence of the ideality factor on metal-semiconductor solar devices
Semiconductor Science and Technology·1993· 15 cited
Frequency Dependence of Positron Annihilation Signal from MOS Structure
physica status solidi (b)·1993· 6 cited
Reverse I-V characteristics of Au/semi-insulating InP (100)
Semiconductor Science and Technology·1993· 9 cited
Positron studies of metal-oxide-semiconductor structures
Journal of Applied Physics·1993· 19 cited
A systematic approach to the measurement of ideality factor, series resistance, and barrier height for Schottky diodes
Journal of Applied Physics·1992· 60 cited
Positron Mobility in Gallium Arsenide
Materials science forum·1992· 4 cited

Frequent Co-authors

C. D. Beling(12), C. C. Ling(7), S. Fung(6), S. Fung(5), T. P. Chen(4), B. K. Panda(3), T. C. Lee(2), Y. Y. Shan(2), P. Asoka‐Kumar(2), B. Nielsen(2), K. G. Lynn(2), T. C. Lee(1), Y. Y. Wang(1), Huihui Weng(1), H.‐J. Gossmann(1), F. C. Unterwald(1), L. C. Feldman(1), Tsz‐Fai Leung(1), V. I. Tal'Yanskǐ(1), Kelvin G. Lynn(1)