Huanglong Li

Chinese Institute for Brain Research — China

Engineering · Physical Sciences

30h-index5.8kcitations81works2.52yr avg
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Research Topics

Advanced Memory and Neural Computing(36), Phase-change materials and chalcogenides(21), Electrocatalysts for Energy Conversion(12), Ferroelectric and Negative Capacitance Devices(12), Photoreceptor and optogenetics research(11)

Publications81 total

Symbolic Reservoir Computing within Memristive Crossbar Arrays as a Cellular Automata
Advanced Intelligent Systems·2025Open Access
Temporal Dynamics Makes Memristive Physical Unclonable Functions More Secure and Ultra‐Lightweight
Advanced Electronic Materials·2025Open Access
Symbolic Reservoir Computing within Memristive Crossbar Arrays as a Cellular Automata
Advanced Intelligent Systems·2025Open Access
Bio-realistic and versatile artificial dendrites made of anti-ambipolar transistors
Neuromorphic Computing and Engineering·2025· 2 citedOpen Access
Resistive-switching properties of monolayer 1<i>T</i>-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi>Hf</mml:mi><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math> atomristors with different metal electrodes
Physical Review Applied·2025
A Te-based memristor with short-term depression behavior
Journal of Physics D Applied Physics·2025· 4 cited
Nanosecond Phase‐Transition Dynamics in Elemental Tellurium (Adv. Funct. Mater. 4/2025)
Advanced Functional Materials·2025Open Access
Nanosecond Phase‐Transition Dynamics in Elemental Tellurium
Advanced Functional Materials·2024· 6 citedOpen Access
Reservoir computing with a random memristor crossbar array
Nanotechnology·2024· 3 cited
Random Projection‐Based Locality‐Sensitive Hashing in a Memristor Crossbar Array with Stochasticity for Sparse Self‐Attention‐Based Transformer
Advanced Electronic Materials·2024· 4 citedOpen Access
Thickness‐Dependent Bandgap and Atomic Structure in Elemental Tellurium Films
physica status solidi (RRL) - Rapid Research Letters·2024· 8 citedOpen Access
Generative complex networks within a dynamic memristor with intrinsic variability
Nature Communications·2023· 20 citedOpen Access
LiNbO3 dynamic memristors for reservoir computing
Frontiers in Neuroscience·2023· 7 citedOpen Access
A mempolar transistor made from tellurium
arXiv (Cornell University)·2023Open Access
Bio-realistic and versatile artificial dendrites made of anti-ambipolar transistors
arXiv (Cornell University)·2022· 1 citedOpen Access
A steep-slope tellurium transistor with a native voltage amplifying threshold switch
Applied Physics Letters·2022· 10 cited
A complementary resistive switching neuron
Nanotechnology·2022· 10 cited
A Sustainable Multipurpose Separator Directed Against the Shuttle Effect of Polysulfides for High‐Performance Lithium–Sulfur Batteries
Advanced Energy Materials·2022· 157 cited
Tellurium‐Based Artificial Neuron: Capturing Biological Complexity While Keeping It Simple
Advanced Electronic Materials·2022· 11 cited
Internal reverse-biased p–n junctions: A possible origin of the high resistance in chalcogenide superlattice for interfacial phase change memory
Applied Physics Letters·2022· 1 cited
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Frequent Co-authors

Hua‐Jun Qiu(11), Luping Shi(10), Guoqiang Xie(8), John Robertson(8), Ziyang Zhang(8), Jing Pei(7), Guoqi Li(7), Xingjun Liu(7), Kai Xi(6), Jiaojiao Gao(6), Xi Lin(6), Juan Lyu(5), Yaoyuan Wang(5), Lei Deng(4), Sen Song(4), Cheng Ma(4), Juan Lv(4), Min Zhu(4), Yuhan He(4), Kai Liu(4)