Jiangping Dai

North China University of Science and Technology — China

Physics and Astronomy · Physical Sciences

10h-index328citations29works0.32yr avg
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Research Topics

GaN-based semiconductor devices and materials(18), ZnO doping and properties(10), Ga2O3 and related materials(7), Metal and Thin Film Mechanics(5), Quantum Dots Synthesis And Properties(3)

Publications29 total

Use of a perforator-based flap from the ulnar palmar artery for the repair of defects caused by the treatment of severe contractures due to Dupuytren's disease
Frontiers in Surgery·2025Open Access
Low-loss edge coupler for thin-film lithium niobate based on wafer-scale photolithography
2024
A 220-GHz InP DHBT power amplifier designed by adaptive impedance inner-stage matching (AIISM) technique
Infrared Physics & Technology·2024· 1 cited
An InP DHBT 260 GHz-340 GHz Amplifier
2023
High Color Rendering Index Hybrid III‐Nitride/Nanocrystals White Light‐Emitting Diodes
Advanced Functional Materials·2022· 2 cited
Observation and Modeling of Leakage Current in AlGaN Ultraviolet Light Emitting Diodes
IEEE Photonics Technology Letters·2019· 5 cited
Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded
Nanoscale Research Letters·2019· 3 citedOpen Access
Lasers: Manipulable and Hybridized, Ultralow‐Threshold Lasing in a Plasmonic Laser Using Elliptical InGaN/GaN Nanorods (Adv. Funct. Mater. 37/2017)
Advanced Functional Materials·2017Open Access
The Manufacture and Property of Nano-Sized InGaN/GaN Light Emitting Diodes
Proceedings of the International Conference of Theoretical and Applied Nanoscience and Nanotechnology·2017Open Access
Manipulable and Hybridized, Ultralow‐Threshold Lasing in a Plasmonic Laser Using Elliptical InGaN/GaN Nanorods
Advanced Functional Materials·2017· 26 cited
Fabrication of AlGaN nanorods with different Al compositions for emission enhancement in UV range
Nanotechnology·2017· 18 cited
Structural and optical properties of Al x Ga 1−x N (0.33 ≤ x ≤ 0.79) layers on high-temperature AlN interlayer grown by metal organic chemical vapor deposition
Superlattices and Microstructures·2016· 8 cited
Improvement of color conversion and efficiency droop in hybrid light-emitting diodes utilizing an efficient non-radiative resonant energy transfer
Applied Physics Letters·2016· 11 cited
Enhanced InGaN/GaN photoelectrodes for visible‐light‐driven hydrogen generation by surface roughening
physica status solidi (a)·2016· 1 citedOpen Access
Fabrication of wafer-scale nanopatterned sapphire substrate through phase separation lithography
Applied Physics A·2016· 2 cited
Significant improvements in InGaN/GaN nano-photoelectrodes for hydrogen generation by structure and polarization optimization
Scientific Reports·2016· 34 citedOpen Access
SIC薄膜の機械的性質の理論的研究【JST・京大機械翻訳】
Bandaoti Guangdian·2016
SiO2/Si3N4誘電体分布ブラッグ反射体に基づくUVバンド‐パスフィルタの設計および製作
Applied Surface Science·2016
Light‐Emitting Diodes: High Color Rendering Index Hybrid III‐Nitride/Nanocrystals White Light‐Emitting Diodes (Adv. Funct. Mater. 1/2016)
Advanced Functional Materials·2016Open Access
Design and fabrication of UV band-pass filters based on SiO2/Si3N4 dielectric distributed bragg reflectors
Applied Surface Science·2015· 50 cited
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Frequent Co-authors

Zili Xie(21), Bin Liu(18), Rong Zhang(18), Tao Tao(17), Zhe Zhuang(16), Ting Zhi(15), Peng Chen(9), Haixiong Ge(8), Dunjun Chen(7), Guogang Zhang(7), Xu Guo(6), Yi Shi(6), Youdou Zheng(5), Youdou Zheng(5), Fengrui Hu(4), Dunjun Chen(4), Xiaoyong Wang(4), Min Xiao(4), Yi Li(4), Yi Li(3)