Yi Shuang

Collaborative Innovation Center of Advanced Microstructures — China

Materials Science · Physical Sciences

16h-index832citations60works2.42yr avg
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Research Topics

Phase-change materials and chalcogenides(37), Chalcogenide Semiconductor Thin Films(25), Transition Metal Oxide Nanomaterials(13), Advanced Memory and Neural Computing(9), Electromagnetic wave absorption materials(6)

Publications60 total

Large-area non-stoichiometric phase transition in transition metal chalcogenide films
Nature Materials·2026· 2 cited
Arsenic-free Ge-Te-based ovonic threshold switching material with reduced leakage current
Scientific Reports·2025Open Access
Room temperature ferromagnetism in polymorphic (Cr,Mn)Te films
APL Materials·2025· 1 citedOpen Access
Investigation of Surface Flashover Mechanisms in SF <sub>6</sub> /N <sub>2</sub> Mixtures Under Nanosecond Pulse
IEEE Transactions on Dielectrics and Electrical Insulation·2025· 1 cited
Melting‐Free Crystalline Polymorphic Transition in CrTe Thin Films: Potential for Phase‐Change Random Access Memory Applications
physica status solidi (RRL) - Rapid Research Letters·2025· 1 citedOpen Access
Phase Engineering of a 1D van der Waals Thin Film
Advanced Functional Materials·2025· 2 citedOpen Access
Unveiling the Significant Role of Schottky Interfaces for Threshold Voltage in Ovonic Threshold Switching
ACS Applied Electronic Materials·2025· 4 citedOpen Access
Polymorphic Phase‐Change Properties and Memory Characteristics of VTe Thin Film
physica status solidi (RRL) - Rapid Research Letters·2025· 1 citedOpen Access
Suppressed density-change of Cr-incorporated MnTe thin film for phase-change memory
2024
Nanoscale Phase Change of Cr2Ge2Te6 Thin Films Induced by Terahertz Near-Fields
2024
Soret-Effect Induced Phase-Change in a Chromium Nitride Semiconductor Film
ACS Nano·2024· 9 citedOpen Access
Author response for "An amorphous Cr&lt;sub&gt;2&lt;/sub&gt;Ge&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;6&lt;/sub&gt;/polyimide double-layer foil with an extraordinarily outstanding strain sensing ability"
2024
Conduction Mechanism in Amorphous NbTe&lt;sub&gt;4&lt;/sub&gt; Thin Film
MATERIALS TRANSACTIONS·2024· 3 citedOpen Access
Amorphous-to-crystalline transition-induced two-step thin film growth of quasi-one-dimensional penta-telluride ZrTe5
Journal of Material Science and Technology·2024· 5 citedOpen Access
Interfacial reaction behavior between ferromagnetic CoFeB and the topological insulator Sb2Te3
Surfaces and Interfaces·2024· 2 cited
Direct observation of phase-change volume in contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material
Applied Physics Letters·2024· 7 cited
Nonvolatile Isomorphic Valence Transition in SmTe Films
ACS Nano·2024· 5 citedOpen Access
Correction: An amorphous Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub>/polyimide double-layer foil with an extraordinarily outstanding strain sensing ability
Materials Horizons·2024Open Access
An amorphous Cr <sub>2</sub> Ge <sub>2</sub> Te <sub>6</sub> /polyimide double-layer foil with an extraordinarily outstanding strain sensing ability
Materials Horizons·2024· 3 citedOpen Access
Thermally-induced nanoscale phase change in chalcogenide glass Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub> revealed by scanning tunneling microscopy
Japanese Journal of Applied Physics·2023· 2 citedOpen Access
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Frequent Co-authors

Yuji Sutou(36), Shogo Hatayama(26), Daisuke Ando(22), Yuta Saito(17), Paul Fons(16), Jinsong Rao(9), Yuxin Zhang(9), Shunsuke Mori(9), Alexander V. Kolobov(8), Satoshi Shindo(6), Xingjian Dai(5), Zhilan Du(5), Pingan Yang(5), Yun‐Heub Song(5), Keisuke Kobayashi(5), Mi Hyeon Kim(5), Yinli Wang(5), Kailin Li(4), Dashuang Wang(4), Xinfang Zhang(4)