Janne Puustinen

Tampere University — Finland

Physics and Astronomy · Physical Sciences

19h-index929citations79works1.32yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(57), Semiconductor Lasers and Optical Devices(19), Quantum and electron transport phenomena(16), Advanced Fiber Laser Technologies(16), Photonic and Optical Devices(14)

Publications79 total

Electronic properties of metamorphic GaSbBi films on GaAs
APL Materials·2025Open Access
Electronic properties of metamorphic GaSbBi films on GaAs
arXiv (Cornell University)·2024Open Access
Detection of BiGa hetero-antisites at Ga(As,Bi)/(Al,Ga)As interfaces
Journal of Applied Physics·2024· 4 citedOpen Access
Low bandgap GaAsNBi solar cells
Solar Energy Materials and Solar Cells·2023· 4 citedOpen Access
Influence of the Bismuth Content on the Optical Properties and Photoluminescence Decay Time in GaSbBi Films
ACS Omega·2023· 4 citedOpen Access
Epitaxy and Properties of GaAs(N)Bi Alloys
Trepo - Institutional Repository of Tampere University·2023
Comprehensively analysis of hot electron transport in as-grown and thermally annealed n-type modulation-doped Al0.15Ga0.85As/GaAs0.96Bi0.4 quantum well structure
Materials Science in Semiconductor Processing·2022· 9 cited
High‐Field Electron‐Drift Velocity in n‐Type Modulation‐Doped GaAs<sub>0.96</sub>Bi<sub>0.04</sub> Quantum Well Structure
physica status solidi (RRL) - Rapid Research Letters·2022· 7 cited
Hot Electron Transport in N-Type Modulation-Doped Al0.15ga0.85as/Gaas0.96bi0.4 Quantum Well Structure
SSRN Electronic Journal·2022Open Access
A quantitative analysis of electronic transport in n- and p-type modulation-doped GaAsBi/AlGaAs quantum well structures
Semiconductor Science and Technology·2021· 13 cited
Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures
Semiconductor Science and Technology·2020· 11 cited
Raman spectroscopy of GaSb1−xBix alloys with high Bi content
Applied Physics Letters·2020· 7 citedOpen Access
Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility
Semiconductor Science and Technology·2019· 18 cited
Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers
Journal of Applied Physics·2019· 7 cited
Epitaxial phases of high Bi content GaSbBi alloys
Journal of Crystal Growth·2019· 11 citedOpen Access
Analysis of GaAsBi growth regimes in high resolution with respect to As/Ga ratio using stationary MBE growth
Journal of Crystal Growth·2019· 22 cited
Optical properties of GaAs<sub>1−x</sub>Bi<sub>x</sub>/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates
Semiconductor Science and Technology·2018· 12 citedOpen Access
Exciton localization and structural disorder of GaAs<sub>1−x</sub>Bi<sub>x</sub>/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates
Semiconductor Science and Technology·2018· 5 citedOpen Access
A study of electric transport in n- and p-type modulation-doped GaInNAs/GaAs quantum well structures under a high electric field
Semiconductor Science and Technology·2018· 7 cited
Optical properties of n- and p-type modulation doped GaAsBi/AlGaAs quantum well structures
Journal of Alloys and Compounds·2017· 20 cited
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Frequent Co-authors

Mircea Guină(45), Joonas Hilska(14), Ömer Dönmez(13), Ayşe Erol(13), Oleg G. Okhotnikov(10), Ville‐Markus Korpijärvi(9), Mingjian Wu(8), E. Luna(8), A. Trampert(7), Antti Tukiainen(7), Fahrettin Sarcan(6), M. Güneş(6), P. Laukkanen(5), Mustafa Aydın(5), Erman Çokduygulular(4), Selman Mutlu(4), Andreas Schramm(3), Antti Härkönen(3), J. Rautiainen(3), M. Pessa(3)