Han Jung

Intelligent Image and Information System — South Korea

Engineering · Physical Sciences

6h-index103citations28works0.02yr avg
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Research Topics

Advanced Semiconductor Detectors and Materials(21), Semiconductor Quantum Structures and Devices(9), Infrared Target Detection Methodologies(7), Calibration and Measurement Techniques(4), Advanced Optical Sensing Technologies(4)

Publications28 total

Influence of absorber/barrier strain on 1/f noise characteristic of very long wavelength infrared detectors with InAs/GaSb superlattice
Infrared Physics & Technology·2025
640x512 T2SL dual-band infrared detector and read-out circuit
2025
640 x 512 dual-band midwave and longwave infrared focal plane array at i3system
2023· 3 cited
Wafer-level integration for hybrid chip of infrared detectors
2023· 1 cited
Design and performance of dual-band MWIR/LWIR focal plane arrays based on a type-II superlattice nBn structure
Opto-Electronics Review·2023· 6 citedOpen Access
Plasma Treatment for Surface Stabilization in InAs/GaSb Type-II Superlattice LWIR and VLWIR Photodetectors
Journal of Electronic Materials·2022· 1 cited
Electrical Characteristics of a Ga-free T2SL Mid-wave Infrared nBn Detector Based on an InAs/AlAsSb/InAsSb Barrier
Journal of Electronic Materials·2022· 3 cited
Quantum efficiency improvement by backside pattern on resonant cavity enhanced LWIR nBn photodetectors
2022
Comparative advantages of a type-II superlattice barrier over an AlGaSb barrier for enhanced performance of InAs/GaSb LWIR nBn photodetectors
Optics Letters·2021· 17 cited
Investigation of ICP dry etching of InAs/GaSb type-II superlattice LWIR photodetector
2021· 5 cited
Dark current improvement by an in-situ plasma treatment on type-II superlattice LWIR photodetectors
2021· 3 cited
HOT InAs/InAsSb nBn detector development for SWaP detector
2021· 10 cited
Effect of Barrier Layer on InAs/GaSb Type-II Superlattice nBn Detector
2021 International Conference on Electronics, Information, and Communication (ICEIC)·2021· 1 cited
HOT MWIR Detector Development with InAs/InAsSb T2SL nBn Structure
2021 International Conference on Electronics, Information, and Communication (ICEIC)·2021· 1 cited
A uniform micro-bump formation method using electroplating
2019· 7 cited
High resolution SXGA InSb detector for long range sights
2019
Dark current improvement due to dry-etch process in InAs/GaSb type-II superlattice LWIR photodetector with nBn structure
Infrared Physics & Technology·2018· 16 cited
Dark current reduction of InGaAs photodiode by low stress diffusion mask
2018· 3 cited
Relation Between Flat-band Voltage and Quantum efficiency of InSb MWIR detector
Journal of the Semiconductor & Display Technology·2018
Current status of cooled IR detectors at i3system
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2014· 2 cited
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Frequent Co-authors

Young Ho Kim(17), Ahreum Jang(12), Jun Ho Eom(10), Seong Min Ryu(8), Jong Gi Kim(8), Sun Ho Kim(7), Tae Hee Lee(6), Hyun Jin Lee(5), Hyun-Jin Lee(4), Hee Chul Lee(4), Jung O. Son(4), Hyun Chul Jung(4), Ko Ku Kang(4), Jong Hwa Choi(4), Nam Hwan Kim(4), Ko-Ku Kang(4), Byung‐Hyuk Kim(4), Junghyo Nah(3), Choong‐Ki Kim(3), Young Chul Kim(3)