Jenifer Lary

GlobalFoundries (United States) — United States

Physics and Astronomy · Physical Sciences

10h-index534citations20works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(13), Quantum and electron transport phenomena(11), Advancements in Semiconductor Devices and Circuit Design(11), Semiconductor materials and devices(7), Analog and Mixed-Signal Circuit Design(2)

Publications20 total

CMOS-Integrated Low-Noise Junction Field-Effect Transistors for Bioelectronic Applications
IEEE Electron Device Letters·2018· 17 cited
A low-noise, single-photon avalanche diode in standard 0.13 μm complementary metal-oxide-semiconductor process
Applied Physics Letters·2010· 41 cited
Application of microwave techniques in the analysis of quantum waveguide structures and devices
2002· 1 cited
<title>Simulation of electron transport in high-lying superlattice minibands</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1992· 1 cited
Intersubband relaxation of photoexcited carriers in asymmetric coupled quantum wells
Semiconductor Science and Technology·1992· 14 cited
Monte Carlo studies of intersubband relaxation in semiconductor microstructures
Semiconductor Science and Technology·1992· 17 cited
Analysis and modeling of quantum waveguide structures and devices
Journal of Applied Physics·1991· 119 cited
Hot electron transport and relaxation in quantum wells and superlattices
1991· 1 cited
Intersubband relaxation of hot carriers in quantum well systems
Superlattices and Microstructures·1991· 8 cited
Negative differential resistance in a resonant quantum wire structure
IEEE Electron Device Letters·1991· 15 cited
Negative Differential Resistance in a Double-Constriction Quantum Wire Structure
NATO ASI series. Series B : Physics·1991
<title>Application of a mode-matching technique to quantum-wire transitions and discontinuities</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1990· 9 cited
<title>Intersubband relaxation of hot carriers in coupled quantum wells</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1990· 5 cited
MBE HEMT-compatible diode lasers
European Solid-State Device Research Conference·1990
Optical phonon-assisted tunneling in double quantum well structures
Applied Physics Letters·1990· 120 cited
The effect of surface roughness on the performance of InP MOSFETs
International Conference on Indium Phosphide and Related Materials·1990· 1 cited
Intersubband relaxation of hot carriers in coupled quantum wells
Solid-State Electronics·1989· 20 cited
Analysis of discontinuities in quantum waveguide structures
Applied Physics Letters·1989· 102 cited
The influence of interfacial roughness on parallel transport at oxide–semiconductor and heterojunction interfaces
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena·1989· 5 cited
Effective base resistance of bipolar transistors
IEEE Transactions on Electron Devices·1985· 38 cited

Frequent Co-authors

Stephen M. Goodnick(15), Andreas Weisshaar(6), V.K. Tripathi(4), Paolo Lugli(4), D. Y. Oberli(2), Jagdeep Shah(2), Vijai K. Tripathi(2), Ryan M. Field(2), Kenneth L. Shepard(2), O. Sri(2), C. W. Wilmsen(2), T. C. Damen(1), J. M. Kuo(1), J. E. Henry(1), John R. Cohn(1), Liam Paninski(1), R. L. Anderson(1), Daniel A. Fleischer(1), Siddharth Shekar(1), Shanshan Dai(1)