E. Vlaikova

Georgi Nadjakov Institute of Solid State Physics — BG

Materials Science · Physical Sciences

8h-index220citations21works0.02yr avg
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Research Topics

Silicon Nanostructures and Photoluminescence(7), Thin-Film Transistor Technologies(6), Metal and Thin Film Mechanics(4), Semiconductor materials and devices(4), ZnO doping and properties(3)

Publications21 total

Chemical vapour deposition growth and Raman characterization of graphene layers and carbon nanotubes
Journal of Physics Conference Series·2016· 12 citedOpen Access
Chemical vapour deposition growth of graphene layers on metal substrates
Journal of Physics Conference Series·2014· 11 citedOpen Access
Light-induced relaxation dynamics in Rh-doped Bi<sub>12</sub>TiO<sub>20</sub>crystals
Journal of Physics Conference Series·2014· 2 citedOpen Access
Infrared ellipsometry as an investigation tool of thin layers grown into plasma immersion N+ implanted silicon
Applied Surface Science·2012· 6 cited
Annealing of Si surface region modified by plasma immersion implantation of nitrogen
Journal of Physics Conference Series·2012· 2 citedOpen Access
Laser technology for synthesis of AlN films: influence of the incident laser fluence on the films microstructure
Journal of Physics Conference Series·2012· 4 citedOpen Access
Oxidation of Si Surface Nitrogenated by Plasma Immersion N + Ion Implantation
2012
Ellipsometric characterization of AlN films synthesized by Pulsed-Laser-Deposition
Journal of Physics Conference Series·2010· 1 citedOpen Access
Structural characterization of AlN films synthesized by pulsed laser deposition
Applied Surface Science·2010· 33 cited
Characterization of Oblique Deposited Nanostructured SiO&lt;sub&gt;x&lt;/sub&gt; Films by Ellipsometric and IR Spectroscopies
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2010
Effect of High-temperature Annealing on Evaporated Silicon Oxide Films: A Spectroscopic Ellipsometry Study
ECS Transactions·2009
Optical models for ellipsometric characterization of high temperature annealed nanostructured SiO2 films
Journal of Optoelectronics and Advanced Materials·2009· 4 cited
Effect of High-Temperature Annealing on Evaporated Silicon Oxide Films: A Spectroscopic Ellipsometry Study
ECS Meeting Abstracts·2009Open Access
Ellipsometric characterization of SiOx films with embedded Si nanoparticles
Vacuum·2009· 11 cited
Influence of the rapid thermal annealing on the properties of a-C:H/c-Si structures
Journal of Physics Conference Series·2008Open Access
Structural transformations and their relation to the optoelectronic properties of chromium oxide thin films
Journal of Physics Conference Series·2008· 51 citedOpen Access
Investigation of p‐Type MOS Structure Irradiated with 23 MeV Electrons
Plasma Processes and Polymers·2006· 3 cited
18MeV electron irradiation-induced metastability in hydrogenated amorphous silicon
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2005· 14 cited
Highly sensitive in-line fiber-optic structure for refractometric measurements
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2005· 1 cited
A refractometric sensor using index-sensitive mode resonance between single-mode fiber and thin film amorphous silicon waveguide
Sensors and Actuators B Chemical·2004· 48 cited
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Frequent Co-authors

A. Szekeres(14), Á. Cziráki(6), P. Petrík(6), T. Lohner(5), S.O. Zlobin(5), P. E. Shepeliavyi(5), E Halova(4), P. Danesh(3), G. Socol(3), Carmen Ristoscu(3), Vera Marinova(3), G. Huhn(3), K. Havancsák(3), I. P. Lisovskyy(3), S. Alexandrova(3), A. Andreev(2), Blagoy Pantchev(2), Blagovesta S. Zafirova(2), Elka Karakoleva(2), E. Alipieva(2)