X. Wallart

Centre National de la Recherche Scientifique — France

Physics and Astronomy · Physical Sciences

30h-index3.6kcitations383works0.92yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(199), Semiconductor materials and devices(103), Advancements in Semiconductor Devices and Circuit Design(83), Advanced Semiconductor Detectors and Materials(82), Nanowire Synthesis and Applications(53)

Publications383 total

Electronic properties of the selenium passivated <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>GaP</mml:mi><mml:msub><mml:mrow><mml:mo>(</mml:mo><mml:mn>111</mml:mn><mml:mo>)</mml:mo></mml:mrow><mml:mi mathvariant="normal">B</mml:mi></mml:msub></mml:mrow></mml:math> surface: Towards growth of large scale quasi-van der Waals 2D/3D heterostructure
Physical Review Materials·2025Open Access
Optimized two-step growth of large surface two-dimensional boron nitride on Ge (001) films by molecular beam epitaxy
Applied Surface Science·2025Open Access
Epitaxial 2D HfSe2 Semiconductor/TaSe2 Metal van der Waals Heterostructure
SPIRE - Sciences Po Institutional REpository·2025Open Access
Thickness Dependence in Phase Formation and Properties of TaSe<sub>2</sub> Layers Grown on GaP(111)<sub><i>B</i></sub>
ACS Applied Materials & Interfaces·2025· 1 citedOpen Access
Selective area molecular beam epitaxy of InSb on InP(111) <sub>B</sub> : from thin films to quantum nanostructures
Nanotechnology·2025· 1 citedOpen Access
Author response for "Selective area molecular beam epitaxy of InSb on InP(111)B: from thin films to quantum nanostructures"
2024
3D/2D heterostructure: epitaxial growth of WSe2 on GaP(111)B
SPIRE - Sciences Po Institutional REpository·2024Open Access
In-plane InAs and InSb nanowires grown by selective area MBE
SPIRE - Sciences Po Institutional REpository·2024
Van der Waals epitaxial growth of few layers WSe<sub>2</sub> on GaP(111)<sub>B</sub>
2D Materials·2024· 3 citedOpen Access
Vertical and lateral manipulation of single Cs atoms on the semiconductor InAs(111)A
SciPost Physics·2024· 2 citedOpen Access
Stacking order and electronic band structure in MBE-grown trilayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>WSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math> films
Physical review. B./Physical review. B·2024· 4 citedOpen Access
Report on scipost_202310_00006v2
2024Open Access
Report on scipost_202310_00006v1
2023Open Access
Ultrahigh vacuum Raman spectroscopy for the preparation of III–V semiconductor surfaces
Review of Scientific Instruments·2023· 2 citedOpen Access
Report on scipost_202310_00006v1
2023Open Access
Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe<sub>2</sub> on GaP(111) Heterostructure
ACS Nano·2023· 12 citedOpen Access
Large-Area Epitaxial Mott Insulating 1T-TaSe<sub>2</sub> Monolayer on GaP(111)B
Nano Letters·2023· 4 citedOpen Access
Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) Heterostructure
arXiv (Cornell University)·2023Open Access
Two dimensional boron nitride growth on nickel foils by plasma assisted molecular beam epitaxy from elemental B and N sources
Nanotechnology·2023· 3 citedOpen Access
Band structure tuning at (La,Sr)MnO3 / (Ba,Sr)TiO3 interface
HAL (Le Centre pour la Communication Scientifique Directe)·2023
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Frequent Co-authors

L. Desplanque(16), D. Vignaud(11), F. Mollot(7), S. Godey(6), J. Ávila(5), M. C. Asensio(5), P. Ruterana(5), E. Moreau(4), Christophe Coinon(4), B. Grandidier(4), S. Bollaert(4), Salim El Kazzi(4), Jan Grahn(4), J. P. Nys(4), Catherine Henry de Villeneuve(3), P. Allongue(3), Olivier Dehaese(3), F. J. Ferrer(3), Philippe Caroff(3), H. Sellier(3)