M. Ohkura

Hitachi (Japan) — Japan

Engineering · Physical Sciences

15h-index614citations88works0.02yr avg
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Research Topics

Thin-Film Transistor Technologies(38), Silicon and Solar Cell Technologies(35), Semiconductor materials and devices(32), Silicon Nanostructures and Photoluminescence(21), Advancements in Semiconductor Devices and Circuit Design(20)

Publications88 total

62.1: <i>Invited Paper</i> : Fluorinated Compounds Emission Reduction Activity of WLICC (World LCD Industry Cooperation Committee)
SID Symposium Digest of Technical Papers·2012
High On/Off-Current Ratio in Bottom-Gated Microcrystalline-Silicon Thin-Film Transistors With Vertical-Offset Structure
IEEE Electron Device Letters·2010
Temperature Dependence of Performance and Hot-Carrier Immunity in Low-Temperature Polycrystalline Silicon Thin-Film Transistors
Japanese Journal of Applied Physics·2010
Degradation Characteristics of n- and p-Channel Polycrystalline-Silicon TFTs Under CMOS Inverter Operation
IEEE Transactions on Electron Devices·2010· 8 cited
A Model for Predicting On-Current Degradation Caused by Drain-Avalanche Hot Carriers in Low-Temperature Polysilicon Thin-Film Transistors
IEEE Transactions on Electron Devices·2008· 7 cited
Post-Annealing Effects on a Laterally Grown Polycrystalline Silicon Layer
Japanese Journal of Applied Physics·2008
Accelerated Negative-Bias Temperature Degradation in Low-Temperature Polycrystalline-Silicon p-Channel TFTs Under Dynamic Stress
IEEE Transactions on Electron Devices·2007· 5 cited
Device Performance and Reliability of Fully Developed SOI Transistors and Low-Temperature Poly-Si TFTs
ECS Transactions·2007· 1 cited
P‐9: Unified Model and Prediction Technique for On‐Current Degradation Caused by Drain‐Avalanche Hot Carriers in Low‐Temperature Poly‐Silicon Thin‐Film Transistors
SID Symposium Digest of Technical Papers·2007· 1 cited
34.5L: <i>Late‐News Paper</i> : Low Cost Retarder‐less Transflective IPS‐LCD
SID Symposium Digest of Technical Papers·2007· 6 cited
Advanced IPS technology for mobile applications
Journal of the Society for Information Display·2007· 10 cited
High Reliability and Performance Poly-Si TFTs for System in Displays
ECS Transactions·2006· 2 cited
A New Study on the Degradation Mechanism in Low-Temperature p-Channel Polycrystalline Silicon TFTs Under Dynamic Stress
IEEE Transactions on Electron Devices·2006· 15 cited
High Reliability and Performance Poly-Si TFTs for System in Displays
ECS Meeting Abstracts·2006· 1 cited
Subthreshold properties of TFTs with laser-crystallized laterally grown polysilicon layers
IEEE Electron Device Letters·2006· 14 cited
Degradation Mechanism in Low-Temperature P-Channel Polycrystalline Silicon TFTs Under Dynamic Stress
2006
Effects of the Timing of AC Stress on Device Degradation Produced by Trap States in Low-Temperature Polycrystalline-Silicon TFTs
IEEE Transactions on Electron Devices·2005· 33 cited
43.3: Integration of Reliability with High Current Drivability by using SELAX Technology for High‐Resolution (&gt;300 ppi) System‐in‐Displays
SID Symposium Digest of Technical Papers·2005
21.3: An Improved Dynamic Ratio Less Shift Register Circuit Suitable for LTPS‐TFT LCD Panels
SID Symposium Digest of Technical Papers·2005· 2 cited
A New Model for Device Degradation in Low-Temperature N-Channel Polycrystalline Silicon TFTs Under AC Stress
IEEE Transactions on Electron Devices·2004· 38 cited
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Frequent Co-authors

H. Fujii(18), T. Shiba(10), Mutsuko Hatano(8), Yoshiaki Toyota(8), T. Tanimori(8), Toshihiko Itoga(8), H. Hayashii(7), S. Noguchi(7), N. Fujiwara(7), N. Iida(7), K. Muramatsu(7), T. Nagira(7), H. Nishioka(7), H. Ikeda(7), T. Tauchi(7), S. Kawabata(7), K. Shimozawa(7), T. Tokuyama(6), R. Enomoto(6), I. Adachi(6)