Reto Rhyner

Synopsys (Switzerland) — Switzerland

Engineering · Physical Sciences

11h-index426citations21works10.02yr avg
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Research Topics

Advancements in Semiconductor Devices and Circuit Design(17), Nanowire Synthesis and Applications(13), Semiconductor materials and devices(9), Thermal properties of materials(7), 2D Materials and Applications(2)

Publications21 total

Design Technology Co-Optimization for the DRAM Cell Structure With Contact Resistance Variation
IEEE Transactions on Electron Devices·2024· 10 cited
Hierarchical modeling for TCAD simulation of short-channel 2D material-based FETs
Solid-State Electronics·2022· 11 cited
Non-parabolic effective mass model for dissipative quantum transport simulations of III–V nano-devices
Journal of Applied Physics·2022· 1 citedOpen Access
Influence of thermal losses at the gate contact of Si nanowire transistors: A phenomenological treatment in quantum transport theory
Applied Physics Letters·2017· 9 cited
Length Scale of Diffusive Phonon Transport in Suspended Thin Silicon Nanowires
Nano Letters·2016· 32 cited
Effect of surface roughness and phonon scattering on extremely narrow InAs-Si Nanowire TFETs
2016· 7 cited
Atomistic simulation of nanodevices
2016· 3 cited
Minimizing Self-Heating and Heat Dissipation in Ultrascaled Nanowire Transistors
Nano Letters·2016· 47 cited
Phonon-limited performance of single-layer, single-gate black phosphorus n- and p-type field-effect transistors
2015· 29 cited
<i>Ab initio</i>simulation of single- and few-layer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>transistors: Effect of electron-phonon scattering
Physical Review B·2015· 106 cited
Quantum Transport Beyond the Ballistic Limit
Repository for Publications and Research Data (ETH Zurich)·2015· 3 citedOpen Access
Ab-initio simulations of MoS&lt;inf&gt;2&lt;/inf&gt; transistors: From mobility calculation to device performance evaluation
2014· 14 cited
Influence of anharmonic phonon decay on self-heating in Si nanowire transistors
Applied Physics Letters·2014· 10 cited
Atomistic modeling of coupled electron-phonon transport in nanowire transistors
Physical Review B·2014· 51 cited
Influence of anharmonic phonon decay on self-heating in Si nanowire transistors
2014
Phonon-limited low-field mobility in silicon: Quantum transport vs. linearized Boltzmann Transport Equation
Journal of Applied Physics·2013· 26 cited
Self-heating effects in ultra-scaled Si nanowire transistors
2013· 17 cited
Atomistic simulation of electron and phonon transport in nano-devices
2013· 3 cited
<i>In situ</i>doping of catalyst-free InAs nanowires
Nanotechnology·2012· 27 cited
Simulation study of nanowire tunnel FETs
2012· 6 cited
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Frequent Co-authors

Mathieu Luisier(17), Áron Szabó(4), Andreas Schenk(4), Cedric Bessire(3), Hamilton Carrillo-Nuñez(2), Shyamprasad N. Raja(1), Kantawong Vuttivorakulchai(1), Dimos Poulikakos(1), H. Ghoneim(1), Philipp Mensch(1), Heinz Schmid(1), Charles Rettner(1), Siegfried Karg(1), Kirsten E. Moselund(1), Heike Riel(1), Mikael Björk(1), Luca Silvestri(1), Mattias Palsgaard(1), Martin Frey(1), Jess Wellendorff(1)