M. Turcu

Institut für Solarenergieforschung — Germany

Physics and Astronomy · Physical Sciences

16h-index1.2kcitations29works3.52yr avg
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Research Topics

Semiconductor materials and interfaces(18), Silicon and Solar Cell Technologies(14), Quantum Dots Synthesis And Properties(10), Chalcogenide Semiconductor Thin Films(10), Thin-Film Transistor Technologies(7)

Publications29 total

On Perimeter Losses in Perovskite Top‐ and Poly‐Si‐Passivated Silicon Bottom Cells: Do Small Area Tandems Reveal the Full Efficiency Potential?
Solar RRL·2025
Characterization of fully-evaporated perovskite solar cells and photodetectors under high-intensity pulsed proton irradiation
Scientific Reports·2024· 7 citedOpen Access
Introducing pinhole magnification by selective etching: application to poly-Si on ultra-thin silicon oxide films
Energy Procedia·2017· 17 citedOpen Access
A simple method for pinhole detection in carrier selective POLO-junctions for high efficiency silicon solar cells
Solar Energy Materials and Solar Cells·2017· 66 cited
On the recombination behavior of p<sup><i>+</i></sup>-type polysilicon on oxide junctions deposited by different methods on textured and planar surfaces
physica status solidi (a)·2017· 71 cited
Industrial, Screen-Printed Double-Side Contacted Polo Cells
EU PVSEC·2017· 17 citedOpen Access
Finding pinholes in carrier selective polycrystalline Si / crystalline Si contacts: like a needle in a haystack
European Microscopy Congress 2016: Proceedings·2016Open Access
Electrical Deactivation of Boron in p+-Polycrystalline Silicon/SiOx/Crystalline Silicon Passivating Contacts for Silicon Solar Cells
2016· 1 cited
Parasitic Absorption in Polycrystalline Si-layers for Carrier-selective Front Junctions
Energy Procedia·2016· 101 citedOpen Access
Working principle of carrier selective poly-Si/c-Si junctions: Is tunnelling the whole story?
Solar Energy Materials and Solar Cells·2016· 211 cited
Dopant diffusion from p<sup>+</sup>-poly-Si into c-Si during thermal annealing
2016· 8 cited
Evolution of oxide disruptions: The (W)hole story about poly-Si/c-Si passivating contacts
2016· 25 cited
Implementation of n+ and p+ Poly Junctions on Front and Rear Side of Double-Side Contacted Industrial Silicon Solar Cells
EU PVSEC·2016· 41 citedOpen Access
Optimization of p+ Poly-Si / c-Si Junctions on Wet-Chemically Grown Interfacial Oxides and on Different Wafer Morphologies
EU PVSEC·2016· 7 citedOpen Access
Analysis of Series Resistance Losses in a-Si:H/c-Si Heterojunction Solar Cells
IEEE Journal of Photovoltaics·2014· 30 cited
730 mV Bifacial Screen Printed a-Si:H/c-Si Heterojunction Solar Cells: Open-Circuit Voltage and Fill Factor Effect from a-Si:H Layer Thickness and Front Metellization
EU PVSEC·2013· 1 citedOpen Access
Silicon heterojunction solar cells: Influence of H2-dilution on cell performance
Solar Energy Materials and Solar Cells·2012· 25 cited
Time constants of open circuit voltage relaxation in Cu(In,Ga)Se2 solar cells
Thin Solid Films·2006· 10 cited
Recombination Mechanisms in Cu(In,Ga)(Se,S)2 Solar Cells
Springer series in materials science·2006· 6 cited
Defect energies, band alignments, and charge carrier recombination in polycrystalline Cu(In,Ga)(Se,S)2 alloys
Qucosa (Saxon State and University Library Dresden)·2003· 1 citedOpen Access
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Frequent Co-authors

Robby Peibst(13), Tobias Wietler(13), Yevgeniya Larionova(12), Sina Reiter(12), Jan Krügener(12), Dominic Tetzlaff(12), J.-D. Kähler(11), Uwe Höhne(10), Uwe Rau(9), Rolf Brendel(9), I. Kötschau(3), Ralf Gogolin(3), R. Ferré(3), Udo Römer(2), Michael Rienäcker(2), Nils Folchert(2), Felix Haase(2), S. Frigge(2), H. Mehlich(2), Jan Schmidt(2)