S. Selberherr

TU Wien — Austria

Engineering · Physical Sciences

49h-index14.8kcitations1.2kworks1.02yr avg
OpenAlex↗ORCID↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Advancements in Semiconductor Devices and Circuit Design(452), Semiconductor materials and devices(420), Quantum and electron transport phenomena(170), Magnetic properties of thin films(146), Silicon Carbide Semiconductor Technologies(114)

Publications1.2k total

Simulation of SAF-enhanced multilayered STT-MRAM structures
Microelectronic Engineering·2025Open Access
Spin currents and torques in ferromagnetic systems with strong interfacial spin-orbit coupling
Scientific Reports·2025Open Access
Emerging Magnetoresistive Memories
2025
Modeling Advanced Magnetoresistive Memories
2025
Interlayer exchange coupling for enhanced performance in spin-transfer torque MRAM devices
Solid-State Electronics·2025· 1 citedOpen Access
Spin Currents and Torques in Ferromagnetic Systems with Strong Interfacial Spin-Orbit Coupling
2025Open Access
Field-free magnetization switching in SOT-MRAM devices with noncollinear antiferromagnets
Microelectronic Engineering·2025· 1 citedOpen Access
Optimizing unconventional trilayer SOTs for field-free switching
Solid-State Electronics·2025Open Access
Modeling Torques in Systems With Spin-Orbit Coupling
IEEE Transactions on Magnetics·2025· 1 citedOpen Access
A multi-level cell for ultra-scaled STT-MRAM realized by back-hopping
Solid-State Electronics·2024· 2 citedOpen Access
Field-Free Magnetization Switching in SOT-MRAM Devices with Noncollinear Antiferromagnets
2024
Simulation of SAF-Enhanced Multilayered STT-MRAM Structures
2024
Simulation of Advanced MRAM Devices for sub-ns Switching
2024
Investigating Reliability Issues in Multi-Layered STT-MRAM with Synthetic Antiferromagnets
2024
Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling
2024
Micromagnetic modeling of double spin-torque magnetic tunnel junction devices
Physica B Condensed Matter·2024· 6 citedOpen Access
Electron and spin transport in semiconductor and magnetoresistive devices
Solid-State Electronics·2024· 3 cited
Influence of Interface Exchange Coupling in Multilayered Spintronic Structures
2024
Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect
2024
Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling
Micromachines·2024· 8 citedOpen Access
page 1 of 61Next →

Frequent Co-authors

Hans Kosina(13), Tibor Grasser(5), Viktor Sverdlov(5), V. Palankovski(5), H. Pötzl(3), H. Ceric(3), Christoph Wasshuber(2), Ting-wei Tang(2), A. Schütz(2), S. Dhar(2), Mihail Nedjalkov(2), Christian Ringhofer(2), H. Stippel(2), Ernst Strasser(2), Roberto Lacerda de Orio(2), W. Jüngling(2), P. Pichler(2), E. Guerrero(2), R. Quay(2), Rui Escadas Martins(2)