Shiwei Liang

Hunan University — China

Engineering · Physical Sciences

9h-index377citations59works1.42yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(45), Semiconductor materials and devices(21), Advancements in Semiconductor Devices and Circuit Design(17), Electromagnetic Compatibility and Noise Suppression(13), Radiation Effects in Electronics(10)

Publications59 total

Optimization of microgrid scheduling based on multi-strategy improved MOPSO algorithm
Global Energy Interconnection·2025· 1 citedOpen Access
Maximal Respiratory Muscle Strength in Singaporean Adults: Normative Reference Values and Predictive Models from a Cross-Sectional Study
Muscles·2025Open Access
Short-term PV Power Prediction by SE-CNN-GRU Based on Black-Winged Kite Algorithm
2025
Capacity Optimization of Combined Cooling Heating and Power Microgrid based on Centralized Busbar Architecture
2025
UIS Ruggedness of Si/SiC Hybrid Switches
2025
Regulation of Colonic Motility by Cystathionine γ-Lyase Neuron Remodeling
Digestion·2025
A Low Loss Trench Lateral IGBT with Superior Switching Performance and Strong Robustness
2025
Investigation on Current and Thermal Balancing Phenomenon in IGBT During Heavy-ion Radiation Through Multi-cell TCAD Simulation
2025
Constructing a prediction model for acute pancreatitis severity based on liquid neural network
Scientific Reports·2025· 5 citedOpen Access
New Observations on Carrier Transport and Thermal Behavior in IGBT During Heavy-ion Radiation
2025
A Unified Physical PSPICE Model of SiC MOSFET With Automatic Parameter Extraction
IEEE Journal of Emerging and Selected Topics in Power Electronics·2024· 2 cited
Improving Single-Event Effect Performance of SiC MOSFET by Excess Hole Extraction
IEEE Transactions on Device and Materials Reliability·2024· 5 cited
Dynamic Degradation of Planar-Gate SiC MOSFETs After Total Ionizing Dose Radiation
IEEE Transactions on Electron Devices·2024· 7 cited
Observations on Short-Circuit and Avalanche Robustness of Asymmetric trench-gate SiC MOSFETs after γ-ray Radiation
2024
Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor
IET Power Electronics·2024· 1 citedOpen Access
Modelling the 3-D Charge-Sharing in Field-Plate Power MOSFETs With Circular Layouts
IEEE Transactions on Electron Devices·2024· 3 cited
A Memetic Algorithm for Vehicle Routing Problem with Fresh Food and Heterogeneous Customer Behavior
Advances in engineering research/Advances in Engineering Research·2024
A Fast-Recovery Split Gate Trench MOSFET Integrated with Area-Efficient Schottky Contacts
2023
Theoretical Analysis and Experimental Characterization of 1.2-kV 4H-SiC Planar Split-Gate MOSFET With Source Field Plate
IEEE Transactions on Electron Devices·2023· 8 cited
Total Ionizing Dose Radiation Effect on Avalanche Robustness of 1200V Trench-type SiC Power MOSFETs
2023· 4 cited
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Frequent Co-authors

Jun Wang(37), Hangzhi Liu(15), Gaoqiang Deng(14), Z. John Shen(13), Hengyu Yu(11), Linfeng Deng(9), Lei Shu(7), Ziyuan Wu(6), Liang Wang(6), Jun Wang(5), Xin Yin(5), Fang Fang(5), Wenjuan Deng(5), Tongde Li(4), Yang Yu(3), Fang Fang(3), Yize Shi(3), Jiaqi Chen(3), Yifan Wu(3), Chen Tan(3)