P. A. Barnes

Physics and Astronomy · Physical Sciences

21h-index1.4kcitations73works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(24), Semiconductor materials and devices(21), Semiconductor materials and interfaces(21), Semiconductor Lasers and Optical Devices(16), Integrated Circuits and Semiconductor Failure Analysis(11)

Publications73 total

Off-site fabrication
2019· 13 cited
Capacitance–Voltage ( <scp>C</scp> – <scp>V</scp> ) Characterization of Semiconductors
Characterization of Materials·2012· 5 cited
Electrical and Electronic Measurements, Introduction
Characterization of Materials·2012
Capacitance–Voltage (C‐V) Characterization Of Semiconductors
Characterization of Materials·2002· 3 cited
Electrical and Electronic Measurements
Characterization of Materials·2002· 6 cited
Solutions to the Fermi-Dirac Integrals in Semiconductor Physics Using Polylogarithms
Journal of Computational Electronics·2002· 21 cited
Figures of Merit of Wide Bandgap Compound Semiconductors with an Emphasis on ZnO
APS·2002
Effect of contact resistance in solid-state thermionic refrigeration
Journal of Applied Physics·2002· 7 cited
Comparison of solid-state thermionic refrigeration with thermoelectric refrigeration
Journal of Applied Physics·2001· 59 cited
Thermoelectric Properties of the Quaternary Stannite Compounds: X2YZTe4 (X= Cu, Ag; y= Zn, Cd, Hg; z= Sn, Pb)
APS March Meeting Abstracts·2001
Thin Film Growth of Zinc Oxide by Vapor Phase Epitaxy
MRS Proceedings·2001
Calculations of cobalt silicide and carbide formation on SiC using the Gibbs free energy
Materials Science and Engineering B·2000· 23 cited
Calculations of tungsten silicide and carbide formation on SiC using the Gibbs free energy
Materials Science and Engineering B·2000· 60 cited
Current–voltage characteristics of a GaAs Schottky diode accounting for leakage paths
Applied Physics Letters·2000· 21 cited
High Temperature Thermal Conductivity Measurements of Quasicrystalline Al<sub>70.8</sub>Pd<sub>20.9</sub>Mn<sub>8.3</sub>
MRS Proceedings·2000· 2 cited
Upper Limitation to the Performance of Single-Barrier Thermionic Emission Cooling
MRS Proceedings·2000
Lateral overgrowth and epitaxial lift-off of InP by halide vapor-phase epitaxy
Journal of Crystal Growth·1998· 11 cited
The effects of low temperature, short time diffusion of zinc on the transport properties of GaAs.
APS Southeastern Section Meeting Abstracts·1996
Thermoelectric Material Preparation: Achieving a Higher Figure of Merit
APS Southeastern Section Meeting Abstracts·1996
Ohmic contacts grown by Liquid Phase Epitaxy for Optical Switches
APS Southeastern Section Meeting Abstracts·1996
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Frequent Co-authors

C. C. Tin(9), John R. Williams(6), J. Crofton(5), Michael J. Bozack(5), William F. Seng(4), R. J. Shul(4), A. J. Howard(4), R. J. Nelson(3), Marc Ulrich(3), C. B. Vartuli(3), Andrew A. Allerman(3), C. Patuwathavithane(3), T. L. Paoli(2), P. D. Wright(2), H. J. Leamy(2), J. M. Poate(2), S. D. Ferris(2), J. S. Williams(2), G. K. Celler(2), Cronin B. Vining(2)