Iuliana Radu

Taiwan Semiconductor Manufacturing Company (China) — China

Materials Science · Physical Sciences

47h-index7.8kcitations384works3.02yr avg
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Research Topics

2D Materials and Applications(111), Advancements in Semiconductor Devices and Circuit Design(105), Semiconductor materials and devices(100), Ferroelectric and Negative Capacitance Devices(90), Quantum and electron transport phenomena(73)

Publications384 total

Bismuth Confinement: A Strategy for Low Resistance and Good Thermal Endurance of Integrated Contacts to MoS <sub>2</sub>
ACS Nano·2026Open Access
Gate-Dielectric Engineering with an Ultrathin Silicon Oxide Interfacial Dipole Layer for Low-Leakage Oxide-Semiconductor Memories
Nano Letters·2026
Channel-last gate-all-around nanosheet oxide semiconductor transistors
ArXiv.org·2025Open Access
Channel-last gate-all-around nanosheet oxide semiconductor transistors
arXiv (Cornell University)·2025Open Access
COMET: Co-Optimization of Memory with Exploratory Technologies for Hybrid and Back-End Gain Cell Arrays
2025
Mechanics of Integration and Component Performance Step-up for Nanosheet Transistors with Ultrathin 2D Channel
2025
Real-World Effectiveness and Safety of Psychedelic-Assisted Psychotherapy: Outcomes from a Large-Scale Compassionate Use Cohort in Switzerland
2025Open Access
Gate Dielectric Engineering with an Ultrathin Silicon-oxide Interfacial Dipole Layer for Low-Leakage Oxide-Semiconductor Memories
arXiv (Cornell University)·2025Open Access
Multi- <i>V</i> <sub>T</sub> in Oxide--Semiconductor Transistors Leveraging Sub-1-nm Dipoles for Low-Refresh Energy Gain Cell Memory
IEEE Transactions on Electron Devices·2025
Spatio-chemical characterization and elimination of localized growth aberrations on monolayer MoS2 for enhanced performance top gated FETs with scaled ALD oxides
Applied Surface Science·2025Open Access
Enhanced Interlayer Coupling in Few-Layer MoS<sub>2</sub> via Stacking of CVD-Grown Monolayers
ACS Applied Engineering Materials·2025· 1 citedOpen Access
Single Sublayer Reconstruction in Substrate-Supported WS<sub>2</sub> Twisted Bilayers
ACS Nano·2025Open Access
Orthogonal $\mathbf{V}_{\mathbf{T}}$ Tuning for Oxide Semiconductor 2T Gain Cell Enabled by Interface Dipole Engineering
2025· 3 cited
$1000 \times$ Lower Leakage in High-Performance Carbon Nanotube Nanosheet Fets
2025
Novel Ultra-Thin Transistor Layer Transfer (TLT) Technology for Demonstrating Wafer-Level nm-Scale 3-Layer Stacking to Enable Multi-Tier Transistors and Backside PDN of a 3D Vertical FET Architecture
2025
Performance Step-Up in PMOS with Monolayer WSe<sub>2</sub> Channel
2025· 2 cited
Thin 3D: an Innovative Approach to Ultra-Thin Wafer-Level Active Device Transfer Technology With Optimized Material and Thermal Solution for 3D Ic
2025
Direct Visualization of Metal-Induced Gap State Distribution and Valley Band Evolution at Metal Versus Semimetal MoS<sub>2</sub> Interfaces
ACS Nano·2025· 1 citedOpen Access
Top-Gated P-MOSFET with CVD-Grown WSe<sub>2</sub> Channels via Self-Aligned WO<sub><i>x</i></sub> Conversion for Spacer Doping
Nano Letters·2025· 4 citedOpen Access
Ultra-low-power cryogenic complementary metal oxide semiconductor technology
Nature Reviews Electrical Engineering·2025· 5 cited
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Frequent Co-authors

Marc Heyns(15), Cedric Huyghebaert(13), Inge Asselberghs(13), Stefan De Gendt(12), Matty Caymax(11), Dennis Lin(10), Surajit Sutar(8), Thierry Conard(8), H. Bender(7), Yashwanth Balaji(7), Quentin Smets(7), Johan Meersschaut(7), Benjamin Groven(7), Daniele Chiappe(6), Goutham Arutchelvan(6), Ankit Nalin Mehta(6), Wilfried Vandervorst(6), Thomas Nuytten(6), M. Jurczak(5), M. A. Kastner(5)