Daniel G. Georgiev

University of Toledo — United States

Materials Science · Physical Sciences

30h-index2.9kcitations175works1.32yr avg
OpenAlex↗ORCID↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Phase-change materials and chalcogenides(30), Glass properties and applications(23), Laser Material Processing Techniques(22), Semiconductor materials and devices(20), GaN-based semiconductor devices and materials(18)

Publications174 total

Enhanced Transient Leakage Currents in Vertical GaN PN Diodes with Junction Termination Extension
2025
A Novel Behavioral Model of the SOS Effect in Pulsed Power Applications
2025
Modeling of Future GaN MOSFETs for Electric Ship Applications
2025
Modeling and Characterization of Current and Future 1.2 kV Wide Bandgap Semiconductor-based MOSFETs
2025· 1 cited
Characterization of LED Driven GaN-based Photoconductive Switches
2025
Single-Event Transients in Vertical GaN Diodes With N-Implanted Hybrid Edge Termination
IEEE Transactions on Nuclear Science·2025· 1 cited
NUCLEAR REACTIONS AND THEIR USE IN MILITARY AFFAIRS
2024Open Access
Novel Single-Cell RNA Technology Simplifies Measurement of Anti-BCMA CAR-Ts in Patient Samples
Blood·2024
Threshold Switching Created VIA in Nanocircuitries: Theory and Experiment
2024
Evaluating Sulfur as a P‐Type Dopant in Cu<sub>3</sub>N Using Ab Initio Methods
physica status solidi (b)·2024· 1 citedOpen Access
Enhancing reproducibility and decentralization in single cell research with biocytometry
2024Open Access
Copper tantalum nitride (CuTaN2) thin films prepared by reactive radio-frequency magnetron sputtering
Applied Physics A·2024· 1 citedOpen Access
Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance
IEEE Transactions on Electron Devices·2024· 7 cited
Massively parallel identification of single-cell immunophenotypes
2024· 2 citedOpen Access
Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability
IEEE Electron Device Letters·2024· 5 cited
Modeling Framework to Compare High Voltage Vertical GaN PN and Merged PN-Schottky Diodes
2024· 2 cited
Percolation Nature of Threshold Switching: An Experimental Verification
2023Open Access
Scaled Projections of Empirically Verified Hybrid Edge Terminated Vertical GaN Diodes to 20 kV
2023· 1 cited
Percolation Nature of Threshold Switching: an Experimental Verification
2023· 2 cited
Design, Packaging, and Empirical Characterization of 1 kV Vertical GaN P-N Diode
2023· 3 cited
page 1 of 9Next →

Frequent Co-authors

P. Boolchand(14), Gregory W. Auner(13), Golam Newaz(9), M. Micoulaut(8), Hans Herfurth(6), Ronald J. Baird(5), Ahsan Mian(5), Koblar Alan Jackson(4), Ivan Avrutsky(4), Sachin S. Thanawala(4), Tao Qu(3), Reiner Witte(3), R. Witte(3), Joseph P. Moening(3), Nanke Jiang(3), Ahalapitiya H. Jayatissa(3), S. Chakravarty(2), Dawn M. Tilbury(2), Lakshmi Vendra(2), Niat Mahmud Rahman(2)