Shota Minoura

Gifu University — Japan

Engineering · Physical Sciences

7h-index355citations11works0.02yr avg
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Research Topics

Chalcogenide Semiconductor Thin Films(9), Quantum Dots Synthesis And Properties(4), Radiation Detection and Scintillator Technologies(4), Advanced Semiconductor Detectors and Materials(4), Copper-based nanomaterials and applications(3)

Publications11 total

Optical constants of Cu(In, Ga)Se2 for arbitrary Cu and Ga compositions
Journal of Applied Physics·2015· 62 cited
Dielectric functions of Cu2ZnSnSe4 and Cu2SnSe3 semiconductors
Journal of Applied Physics·2015· 42 cited
Quantitative Assessment of Optical Gain and Loss in Submicron-Textured<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">C</mml:mi><mml:mi mathvariant="normal">u</mml:mi><mml:mi mathvariant="normal">I</mml:mi><mml:msub><mml:mrow><mml:mi mathvariant="normal">n</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mi mathvariant="normal">G</mml:mi><mml:msub><mml:mrow><mml:mi mathvariant="normal">a</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mi mathvariant="normal">S</mml:mi><mml:msub><mml:mrow><mml:mi mathvariant="normal">e</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Solar Cells Fabricated by Three-Stage Coevaporation
Physical Review Applied·2014· 79 cited
Characterization of optical properties for Cu 2 SnSe 3 thin films by spectroscopic ellipsometry
The Japan Society of Applied Physics·2014
Non-destructive structural characterization of Cu(In,Ga)Se 2 solar cell layers fabricated by 3-stage process
The Japan Society of Applied Physics·2013
Characterization of the composition and structure of Cu(In,Ga)Se 2 -based semiconductors using optical database
The Japan Society of Applied Physics·2013
Dielectric function of Cu(In, Ga)Se2-based polycrystalline materials
Journal of Applied Physics·2013· 117 cited
Fabrication and Characterization of MOVPE-Grown CdTe-on-Si Heterojunction Diode-Type Gamma-Ray Detectors
Journal of Electronic Materials·2008· 16 cited
Characterization of CdTe/n$^{+}$-Si Heterojunction Diodes for Nuclear Radiation Detectors
IEEE Transactions on Nuclear Science·2007· 17 cited
Development of Heterojunction Diode-Type Gamma Ray Detectors Based on Epitaxially Grown Thick CdTe on$hboxn^+$-Si Substrates
IEEE Electron Device Letters·2006· 19 cited
Characterization of CdTe/n+-Si Heterojunction Diodes for Nuclear Radiation Imaging Detectors
2006 IEEE Nuclear Science Symposium Conference Record·2006· 3 cited

Frequent Co-authors

Shigeru Niki(4), Hiroyuki Fujiwara(4), K. Yasuda(4), M. Niraula(4), Masaaki Yokota(4), H. Ohashi(4), K. Nakamura(4), Manaka OMURA(4), I. Shingu(4), Ryo Tanaka(4), Yasuhiko Hayashi(4), Takuji Maekawa(3), Kei Noda(3), Keita Kodera(2), Akihiro Nakane(2), K. Miyazaki(1), Takuya Hara(1), Yuichiro Sago(1), Yoshiki Hirate(1), Hitoshi Tampo(1)