W. Rieß

IBM Research - Zurich — Switzerland

Engineering · Physical Sciences

46h-index8.8kcitations181works0.02yr avg
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Research Topics

Organic Electronics and Photovoltaics(48), Organic Light-Emitting Diodes Research(46), Conducting polymers and applications(28), Advancements in Semiconductor Devices and Circuit Design(24), Semiconductor materials and devices(23)

Publications180 total

III-V-on-CMOS Devices and Circuits: Opportunities in Quantum Infrastructure
2019· 12 cited
Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High- $k$ Gate Dielectric
IEEE Transactions on Electron Devices·2011· 53 cited
A simulation-based study of sensitivity to parameter fluctuations of silicon Tunnel FETs
2010· 33 cited
VLS-grown silicon nanowires — Dopant deactivation and tunnel FETs
2010· 1 cited
Asymmetrically strained all-silicon multi-gate n-Tunnel FETs
Solid-State Electronics·2010· 10 citedOpen Access
Off axis holography of doped and intrinsic silicon nanowires: Interpretation and influence of fields in the vacuum
Journal of Physics Conference Series·2010· 4 citedOpen Access
Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors
Applied Physics Letters·2009· 21 cited
Mapping Active Dopants in Single Silicon Nanowires Using Off-Axis Electron Holography
Nano Letters·2009· 74 cited
Asymmetrically strained all-silicon Tunnel FETs featuring 1V operation
2009· 13 citedOpen Access
Comparison of VLS grown Si NW tunnel FETs with different gate stacks
2009· 45 cited
VLS-grown silicon nanowire tunnel FET
2009· 12 cited
Lateral Strain Profile as Key Technology Booster for All-Silicon Tunnel FETs
IEEE Electron Device Letters·2009· 83 citedOpen Access
Interface engineering for the suppression of ambipolar behavior in Schottky-barrier MOSFETs
2009· 12 cited
Donor deactivation in silicon nanostructures
Nature Nanotechnology·2009· 328 cited
Doping Limits of Grown in<i />situ Doped Silicon Nanowires Using Phosphine
Nano Letters·2008· 109 cited
Toward Nanowire Electronics
IEEE Transactions on Electron Devices·2008· 358 cited
One-Dimensional Nanoelectronic Devices - Towards the Quantum Capacitance Limit
2008· 14 cited
Silicon nanowire tunneling field-effect transistors
Applied Physics Letters·2008· 179 cited
Outperforming the Conventional Scaling Rules in the Quantum-Capacitance Limit
IEEE Electron Device Letters·2008· 81 cited
Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si(111) using silane
Journal of Applied Physics·2008· 111 cited
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Frequent Co-authors

Heike Riel(21), Siegfried Karg(21), Heinz Schmid(11), Tilman Beierlein(7), Joachim Knoch(6), M. Schwoerer(6), Mikael Björk(5), Mats Björk(5), M. Meier(5), Constance Rost(4), Paul Seidler(4), P.H. Degen(4), Maria Antonietta Loi(3), Mauro Murgia(3), Michele Muccini(3), Beat Ruhstaller(3), S. Barth(3), H. Vestweber(3), H. Bäßler(3), Karl Schmid(3)