Jae Eun Seo

Yonsei University — South Korea

Materials Science · Physical Sciences

8h-index181citations12works14.02yr avg
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Research Topics

2D Materials and Applications(11), Graphene research and applications(6), MXene and MAX Phase Materials(5), Advanced Memory and Neural Computing(3), Advancements in Semiconductor Devices and Circuit Design(2)

Publications12 total

Attoampere Level Leakage Current in Chemical Vapor Deposition-Grown Monolayer MoS<sub>2</sub> Dynamic Random-Access Memory in Trap-Assisted Tunneling Limit
ACS Nano·2025· 8 cited
Wafer-Scale Growth of Ultrauniform 2D PtSe<sub>2</sub> Films with Spatial and Thickness Control through Multi-step Metal Conversion
ACS Nano·2024· 17 cited
Improvement of Contact Resistance and 3D Integration of 2D Material Field‐Effect Transistors Using Semi‐Metallic PtSe<sub>2</sub> Contacts
Advanced Functional Materials·2024· 17 citedOpen Access
Large-Scale Complementary Logic Circuit Enabled by Al<sub>2</sub>O<sub>3</sub> Passivation-Induced Carrier Polarity Modulation in Tungsten Diselenide
ACS Applied Materials & Interfaces·2023· 17 cited
Demonstration of PdSe<sub>2</sub> CMOS Using Same Metal Contact in PdSe<sub>2</sub> n‐/p‐MOSFETs through Thickness‐Dependent Phase Transition
Advanced Electronic Materials·2022· 3 cited
A pentagonal 2D layered PdSe<sub>2</sub>-based synaptic device with a graphene floating gate
Journal of Materials Chemistry C·2022· 13 cited
Polarity Control and Weak Fermi-Level Pinning in PdSe<sub>2</sub> Transistors
ACS Applied Materials & Interfaces·2021· 18 cited
Gate‐Controlled Rectifying Direction in PdSe<sub>2</sub> Lateral Heterojunction Diode
Advanced Electronic Materials·2021· 6 cited
Doping-Free All PtSe<sub>2</sub> Transistor via Thickness-Modulated Phase Transition
ACS Applied Materials & Interfaces·2021· 44 cited
Tunable Current Transport in PdSe<sub>2</sub> via Layer‐by‐Layer Thickness Modulation by Mild Plasma
Advanced Electronic Materials·2020· 21 citedOpen Access
Intrinsic limit of contact resistance in the lateral heterostructure of metallic and semiconducting PtSe<sub>2</sub>
Nanoscale·2020· 16 cited
Theoretical Analysis of Ballistic Current Transport in Monolayer Black Arsenic MOSFETs
IEEE Transactions on Electron Devices·2020· 1 cited

Frequent Co-authors

Jiwon Chang(12), Tanmoy Das(7), Joon Young Kwak(7), Dong-Wook Seo(6), Eunpyo Park(4), Eunyeong Yang(3), Sukhyeong Youn(2), Minseung Gyeon(2), Jisoo Seok(2), Seongdae Kwon(2), Dae Kyu Lee(2), Kibum Kang(2), Gichang Noh(2), Jeong Hyeon Kim(1), Minkyung Kim(1), Tae Soo Kim(1), Saeyoung Oh(1), Chang‐Wook Lee(1), Minhyuk Choi(1), Tae Soo Kim(1)