Robert Karsthof

University of Oslo — Norway

Materials Science · Physical Sciences

13h-index646citations27works13.02yr avg
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Research Topics

ZnO doping and properties(17), Semiconductor materials and devices(10), Ga2O3 and related materials(10), Transition Metal Oxide Nanomaterials(9), Silicon Carbide Semiconductor Technologies(6)

Publications27 total

Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime
Materials Science in Semiconductor Processing·2024· 13 citedOpen Access
Defect level in <i>κ</i>-Ga2O3 revealed by thermal admittance spectroscopy
Journal of Applied Physics·2023· 3 cited
The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers
APL Materials·2023· 19 citedOpen Access
Origin of enhanced conductivity in low dose ion irradiated oxides
AIP Advances·2023· 4 citedOpen Access
Cross‐Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations
physica status solidi (a)·2022· 3 citedOpen Access
Light Absorption and Emission by Defects in Doped Nickel Oxide
Advanced Photonics Research·2022· 8 citedOpen Access
Stability, Evolution and Diffusion of Intrinsic Point Defects in 4H-SiC
Materials science forum·2022· 1 citedOpen Access
Light absorption and emission by defects in doped nickel oxide
arXiv (Cornell University)·2022· 2 citedOpen Access
Influence of heat treatments in H2 and Ar on the <i>E</i>1 center in <i>β</i>-Ga2O3
Journal of Applied Physics·2022· 24 citedOpen Access
Formation of carbon interstitial-related defect levels by thermal injection of carbon into <i>n</i>-type 4<i>H</i>-SiC
Journal of Applied Physics·2022· 16 citedOpen Access
Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide
Physical review. B./Physical review. B·2021· 9 citedOpen Access
Identification of LiNi and VNi acceptor levels in doped nickel oxide
APL Materials·2020· 19 citedOpen Access
Conversion pathways of primary defects by annealing in proton-irradiated <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>n</mml:mi></mml:math>-type <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math>-SiC
Physical review. B./Physical review. B·2020· 73 citedOpen Access
Identification of Li$_{\text{Ni}}$ and V$_{\text{Ni}}$ acceptor levels in doped nickel oxide
arXiv (Cornell University)·2020Open Access
Nickel vacancy acceptor in nickel oxide: Doping beyond thermodynamic equilibrium
Physical Review Materials·2020· 43 citedOpen Access
Nickel Oxide–Based Heterostructures with Large Band Offsets
physica status solidi (b)·2019· 32 citedOpen Access
Polaronic interacceptor hopping transport in intrinsically doped nickel oxide
Physical review. B./Physical review. B·2019· 43 citedOpen Access
Semitransparent ZnO-based UV-active solar cells: Analysis of electrical loss mechanisms
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2016· 10 cited
Oxide bipolar electronics: materials, devices and circuits
Journal of Physics D Applied Physics·2016· 94 cited
Semi‐transparent NiO/ZnO UV photovoltaic cells (Phys. Status Solidi A 1∕2016)
physica status solidi (a)·2016· 4 cited
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Frequent Co-authors

Marius Grundmann(19), Holger von Wenckstern(14), Lasse Vines(10), Marianne Etzelmüller Bathen(7), Augustinas Galeckas(6), Andrej Kuznetsov(5), Ymir Kalmann Frodason(4), Peter Schlupp(3), Philip Weiser(3), Ulrike Großner(3), Friedrich‐Leonhard Schein(2), Daniel Splith(2), Paul Räcke(2), Arthur Markus Anton(2), Friedrich Kremer(2), Amanda Langørgen(2), Piyush Kumar(2), Vitaly Zviagin(2), Fabian J. Klüpfel(1), Chang Yang(1)