B.M. Paine

Engineering · Physical Sciences

20h-index1.5kcitations69works0.02yr avg
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Research Topics

Ion-surface interactions and analysis(23), Semiconductor materials and devices(17), Integrated Circuits and Semiconductor Failure Analysis(16), Silicon and Solar Cell Technologies(15), Advancements in Semiconductor Devices and Circuit Design(12)

Publications69 total

Fast-Pulsed Characterizations of RF GaN HEMTs During Wearout
IEEE Transactions on Device and Materials Reliability·2016· 4 cited
Fast-Pulsed Characterization of RF GaN HEMTs in Lifetest Systems
IEEE Transactions on Device and Materials Reliability·2016· 9 cited
Measurement of Temperature in GaN HEMTs by Gate End-to-End Resistance
IEEE Transactions on Electron Devices·2016· 39 cited
Scaling DC lifetests on GaN HEMT to RF conditions
Microelectronics Reliability·2015· 10 cited
Lifetesting GaN HEMTs With Multiple Degradation Mechanisms
IEEE Transactions on Device and Materials Reliability·2015· 38 cited
Degradation rate for surface pitting in GaN HEMT
2015· 8 citedOpen Access
Acceleration parameters and reliability of SiGe HBTs during long-term high-V<sub>ce</sub> operation
2008
CCDC 616619: Experimental Crystal Structure Determination
The Cambridge Structural Database·2007Open Access
CCDC 616616: Experimental Crystal Structure Determination
The Cambridge Structural Database·2007Open Access
CCDC 616618: Experimental Crystal Structure Determination
The Cambridge Structural Database·2007Open Access
CCDC 616617: Experimental Crystal Structure Determination
The Cambridge Structural Database·2007Open Access
CCDC 237883: Experimental Crystal Structure Determination
The Cambridge Structural Database·2005Open Access
CCDC 237882: Experimental Crystal Structure Determination
The Cambridge Structural Database·2005Open Access
High-resolution transmission electron microscopy on aged InP HBTs
Microelectronics Reliability·2004· 1 cited
Acceleration parameters and reliability of SiGe HBTs during long-term forward-biased operation
2004· 2 cited
The effects of ternary alloys on thermal resistances of HBTs, HEMTs, and laser diodes
2003
Reliability of 100 nm silicon nitride capacitors in an InP HEMT MMIC process
2003
Very-low-temperature lifetests on InP-based HBTs-an update
2003· 3 cited
Reliability of 100 nm silicon nitride capacitors in an InP HEMT MMIC process
Microelectronics Reliability·2003· 2 cited
The effects of ternary alloys on thermal resistances of HBTs, HEMTs, and laser diodes
Microelectronics Reliability·2003· 4 cited
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Frequent Co-authors

M‐A. Nicolet(5), Neil T. Kubota(5), M.J. Delaney(5), V. S. Speriosu(4), M. G. Grimaldi(4), M.−A. Nicolet(4), Steve R. Polmanter(4), Vincent T. Ng(4), Carl R. Ignacio(4), S. Thomas(4), D.G. Sargood(3), M.‐A. Nicolet(3), I. Golecki(3), G. Kinoshita(3), R.H. Walden(3), H. L. Glass(2), D. K. Sadana(2), S. Matteson(2), T. Vreeland(2), Thomas Rust(2)