Kenjiro Uesugi

Mie University — Japan

Physics and Astronomy · Physical Sciences

19h-index1.1kcitations143works2.42yr avg
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Research Topics

GaN-based semiconductor devices and materials(99), Acoustic Wave Resonator Technologies(38), Metal and Thin Film Mechanics(37), Ga2O3 and related materials(37), Astro and Planetary Science(21)

Publications143 total

Semipolar (112¯2)$\left(\right. 11 \bar{2} 2 \left.\right)$ AlGaN‐Based Multiple Quantum Wells in the Far‐UVC Region on Face‐to‐Face Annealed Sputter‐Deposited AlN
physica status solidi (b)·2025Open Access
Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templates
Applied Physics Express·2025Open Access
3‐1: <i>Invited Paper:</i> Precise strain‐engineering of 300 mm GaN‐on‐Si micro‐LED epiwafer to open the path to silicon industry fabs
SID Symposium Digest of Technical Papers·2025
Far-UVC LEDs fabricated on face-to-face annealed sputter-deposited AlN templates
2025
Crystal orientation control of <i>a</i>-plane AlN films on <i>r</i>-plane sapphire fabricated by sputtering and high-temperature annealing
Journal of Applied Physics·2024· 5 citedOpen Access
Well Number Dependence of Internal Quantum Efficiency in AlGaN Quantum Wells on Low‐Dislocation Sputtered AlN Templates
physica status solidi (b)·2024· 2 citedOpen Access
230 nm wavelength range far-UVC LED with low Al-composition differentiation between well and barrier layers of MQWs
Applied Physics Express·2024· 16 citedOpen Access
Temperature‐ and Excitation Power Density‐Resolved Photoluminescence of AlGaN‐Based Multiple Quantum Wells Emitting in the Spectral Range of 220–260 nm
physica status solidi (b)·2024· 1 citedOpen Access
Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD
2024
Fabrication of deep UV LEDs with a high-quality AlGaN on face-to-face annealed sputter-deposited AlN template
2024
Polarity control of sputter-deposited AlN with high-temperature face-to-face annealing
Materials Science in Semiconductor Processing·2023· 13 cited
MOVPE growth of AlN and AlGaN films on N-polar annealed and sputtered AlN templates
Journal of Crystal Growth·2023· 9 cited
Optical characterization of point defects on internal quantum efficiency in AlGaN quantum wells grown on face-to-face-annealed sputtered AlN templates
AIP Advances·2023· 2 citedOpen Access
Movpe Growth of Aln and Algan Films on N-Polar Annealed and Sputtered Aln Templates
SSRN Electronic Journal·2023Open Access
Corrigendum: “Fabrication of AlN templates by high-temperature face-to-face annealing for deep UV LEDs” [Jpn. J. Appl. Phys. <b>60</b> , 120502 (2021)]
Japanese Journal of Applied Physics·2022
263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities
Applied Physics Express·2022· 49 citedOpen Access
Extremely high internal quantum efficiency of AlGaN-based quantum wells on face-to-face annealed sputter-deposited AlN templates
Applied Physics Express·2021· 12 cited
Fabrication of AlN templates by high-temperature face-to-face annealing for deep UV LEDs
Japanese Journal of Applied Physics·2021· 32 citedOpen Access
Thermal strain analysis considering in-plane anisotropy for sputtered AlN on <i>c</i>- and <i>a</i>-plane sapphire under high-temperature annealing
AIP Advances·2021· 5 citedOpen Access
Reduction of threading dislocation densities of N-polar face-to-face annealed sputtered AlN on sapphire
Journal of Crystal Growth·2021· 27 cited
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Frequent Co-authors

Hideto Miyake(28), Kanako Shojiki(21), Shigeyuki Kuboya(10), Shiyu Xiao(9), Yusuke Hayashi(8), T. Hayashi(4), Shinya Nunoue(4), H. Iglseder(4), Sakuntam Sanorpim(4), Kentaro Onabe(4), Takao Nakamura(3), Kenji Norimatsu(3), S. Kimura(3), Hisashi Yoshida(3), E. Igenbergs(3), Gerhard Koller(3), A. Glasmachers(3), E. Grün(3), G. Schwehm(3), Hitoshi Mizutani(3)