В. Н. Бессолов

Ioffe Institute — Russia

Physics and Astronomy · Physical Sciences

15h-index945citations107works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(69), Semiconductor Quantum Structures and Devices(44), Metal and Thin Film Mechanics(20), Semiconductor materials and devices(20), Semiconductor materials and interfaces(20)

Publications107 total

Semipolar Wide-Band III–N-Layers on a Silicon Substrate: Orientation Controlling Epitaxy and the Properties of Structures (Review)
Technical Physics·2024
Surface Morphology of AlN Layers Grown on a Nano-Structured SiNx/Si(100) Template
Semiconductors·2024
Morphology of the Surface of Semipolar GaN Layers during Epitaxy on a Nano-Patterned Si Substrate
Technical Physics·2023
Semi-polar GaN(11-22) on nano-structured Si(113): a structure for reducing thermal stresses
Конденсированные среды и межфазные границы·2023Open Access
Initial Stages of Growth of the GaN(11$$\bar {2}$$2) Layer on a Nano-structured Si(113) Substrate
Semiconductors·2023
Initial stages of growth of the GaN(11\=22) layer on a nano-structured Si(113) substrate
Физика и техника полупроводников·2023· 1 citedOpen Access
Полуполярные широкозонные III-N-слои на кремниевой подложке: эпитаксия с контролем свойств структур (обзор)
Журнал технической физики·2023· 1 citedOpen Access
Deformation of Semipolar and Polar Gallium Nitride Synthesized on a Silicon Substrate
Bulletin of the Russian Academy of Sciences Physics·2022· 2 cited
Semipolar III-N Layers Deposited on a Nanostructured Silicon Substrate: Process and Luminescence Specificity
Bulletin of the Russian Academy of Sciences Physics·2022
Anisotropic Stresses in GaN(11‒20) Layers on an r-Al2O3 Substrate during Hydride Vapor Phase Epitaxy
Semiconductors·2022· 1 cited
9758
Физика и техника полупроводников·2022Open Access
Initial Stages of Growth of Semipolar AlN on a Nanopatterned Si(100) Substrate
Semiconductors·2021
Microstructure of Epitaxial GaN Layers Synthesized on Nanoprofiled Si(001) Substrates
Crystallography Reports·2021
Formation of Semipolar Group-III-Nitride Layers on Textured Si(100) Substrates with Self-Forming Nanomask
Semiconductors·2021· 6 cited
Микроструктура эпитаксиальных слоев GaN, полученных на нанопрофилированных Si(001)-подложках
Кристаллография·2021
The growth of hexagonal and cubic GaN on a nano-patterned Si(100) substrate
Journal of Physics Conference Series·2020· 5 citedOpen Access
TEM investigation of microstructure of semipolar GaN layers grown on nano-patterned Si(001) substrates
Journal of Physics Conference Series·2020Open Access
Plastic Relaxation of Stressed Semipolar AlN($$10\bar {1}1$$) Layer Synthesized on a Nanopatterned Si(100) Substrate
Technical Physics·2020· 4 cited
ПЭМ исследование структуры полуполярных слоёв GaN, полученных на нанопрофилированных Si(001) подложках с использованием промежуточного слоя SiC
XXVIII Российская конференция по электронной микроскопии и VI школа молодых учёных "Современные методы электронной, зондовой микроскопии и комплементарные методы в исследованиях наноструктур и наноматериалов"·2020
Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering
Technical Physics Letters·2020
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Frequent Co-authors

E. V. Konenkova(33), С. А. Кукушкін(16), М. В. Лебедев(15), S. N. Rodin(13), А. В. Осипов(13), M. P. Shcheglov(12), Yu. V. Zhilyaev(8), V. N. Panteleev(8), Dietrich R. T. Zahn(7), А. V. Myasoedov(5), M. E. Kompan(5), Н. А. Феоктистов(5), Sh. Sh. Sharofidinov(5), A. E. Kalmykov(4), S. D. Konenkov(4), D. S. Kibalov(4), V. K. Smirnov(4), L. M. Sorokin(4), B. V. Tsarenkov(3), Н. К. Полетаев(3)