Menglin Huang

Jingdezhen Ceramic Institute — China

Engineering · Physical Sciences

20h-index2.1kcitations68works0.72yr avg
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Research Topics

Chalcogenide Semiconductor Thin Films(29), Quantum Dots Synthesis And Properties(21), Perovskite Materials and Applications(15), Semiconductor materials and devices(15), Semiconductor materials and interfaces(8)

Publications68 total

<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow><mml:mrow><mml:mi>Si</mml:mi><mml:mo>/</mml:mo><mml:mrow><mml:mi>Si</mml:mi><mml:mi mathvariant="normal">O</mml:mi></mml:mrow></mml:mrow></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math> MOSFET reliability physics: From four-state model to all-state model
Physical Review Applied·2025· 1 cited
#1942 Novel therapeutic for diabetic kidney disease through targeting Lp-PLA2 in immune cells and damaged renal parenchymal cell
Nephrology Dialysis Transplantation·2025
Generalized <i>A</i>(<i>n</i>)<i>BC</i> Recombination Model in Semiconductors with Multilevel Defects
Journal of the American Chemical Society·2025
Electroluminescence of NV Color Centers in Diamond p-i-n Diodes mediated by Charge-state Dynamics
arXiv (Cornell University)·2025Open Access
Hardware-aware Graph Partition for Mobile Inference Acceleration
2025
Statistics on Oxygen Vacancy Defects in Amorphous HfO <sub>2</sub> : A Neural‐Network Interatomic Potential Assisted High‐Throughput Prediction
Small Methods·2025
Silicon Nanowire Gate‐All‐Around Cold Source MOSFET With Ultralow Power Dissipation: A Machine‐Learning‐Hamiltonian Accelerated Design
Advanced Functional Materials·2025· 1 cited
Identification of luminescent defects in wide-bandgap semiconductors using first-principles
Journal of Physics Condensed Matter·2025· 2 cited
High conversion efficiency of a thermoelectric generator attributed to consistency of material parameters
Zeitschrift für angewandte Mathematik und Physik·2025
Defect phonon renormalization during nonradiative multiphonon transitions in semiconductors
Physical review. B./Physical review. B·2025· 6 cited
Semiconducting and mechanism of Sb2O3/Y2O3-doped zirconia
Journal of Materials Science Materials in Electronics·2025
Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects
arXiv (Cornell University)·2025Open Access
Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors
arXiv (Cornell University)·2025Open Access
Controlled synthesis and multi-effect synergistic lithium storage of micron-sized porous hexagonal prismatic titanium-based high-entropy oxide anodes
Dalton Transactions·2025
Si/SiO$_\text{2}$ MOSFET Reliability Physics: From Four-State Model to All-State Model
arXiv (Cornell University)·2024Open Access
Resistance Dependence of Cobalt on Line Width in Advanced Interconnects: First-Principles Modelling
2024
Role of anion–cation antisites in Zn-based II–IV–V2 chalcopyrite semiconductors
Journal of Applied Physics·2024· 2 cited
Metastability and anharmonicity enhance defect-assisted nonradiative recombination in low-symmetry semiconductors
arXiv (Cornell University)·2023Open Access
Improved Carrier Lifetimes of CdSe Thin Film via Te Doping for Photovoltaic Application
ACS Applied Materials & Interfaces·2023· 16 cited
Intrinsic Instability of Rhombohedral (Hf, Zr)O2 Phases and Endurance Crisis of Hf-based Ferroelectric Devices
Research Square (Research Square)·2023Open Access
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Frequent Co-authors

Shiyou Chen(39), Yu‐Ning Wu(12), Dan Han(6), Zenghua Cai(6), Shanshan Wang(5), Jiang Tang(4), Su‐Huai Wei(4), Weiqin Ao(4), Peng Xu(3), Chao Chen(3), Jinchen Wei(3), Zhe Gong(3), F.S. Liu(3), Yu Li(3), J.Q. Li(3), Weibin Chu(3), Aron Walsh(3), Xin-Gao Gong(3), Shanshan Wang(3), Shanshan Wang(3)