Min Sup Choi

Chungnam National University — South Korea

Materials Science · Physical Sciences

23h-index5.3kcitations75works3.82yr avg
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Research Topics

2D Materials and Applications(40), Graphene research and applications(28), MXene and MAX Phase Materials(16), Ferroelectric and Negative Capacitance Devices(11), Advanced Memory and Neural Computing(10)

Publications75 total

Dipole-Driven Charge Trapping in Monolayer Janus MoSSe for Ultrathin Nonvolatile Memory Devices
Nano-Micro Letters·2026Open Access
Hybrid tungsten oxyselenide/graphene electrodes for near-lossless 2D semiconductor phase modulators
Light Science & Applications·2026Open Access
Doping and Passivation Effects in Transition Metal Dichalcogenides via HfO2 Thin Film Deposition
Electronic Materials Letters·2025
Highly Reliable MoS <sub>2</sub> Flash Memory with Ultrathin TaO <sub> <i>x</i> </sub> Tunneling Layer Formed via Partial Oxidation of TaS <sub>2</sub> Floating Gate
ACS Nano·2025
Quantum Phase Transitions in Graphene Coupled to a Twisted WSe <sub>2</sub> Moiré Ferroelectricity
Advanced Materials·2025Open Access
Dysregulated vitamin D signaling in Hashimoto’s thyroiditis: an integrated transcriptomic study in a Korean cohort
Frontiers in Endocrinology·2025Open Access
Machine Learning Based on Digital Image Colorimetry Driven In Situ, Noncontact Plasma Etch Depth Prediction
Advanced Intelligent Systems·2025Open Access
Recovery of High-Purity Valuable Metals Through Recycling of Used Batteries
Journal of the Korean Battery Society·2025
High On/Off Current Ratio and Ultrashort Channel <i>p</i>-Type Vertical FET Realized by Plasma Oxidation of WSe<sub>2</sub>
ACS Applied Electronic Materials·2025· 2 cited
In-situ and Non-contact Etch Depth Prediction in Plasma Etching via Machine Learning (ANN &amp; BNN) and Digital Image Colorimetry
arXiv (Cornell University)·2025Open Access
Contact Engineering and Doping Techniques for 2D Semiconductors
IntechOpen eBooks·2025Open Access
Correction to “Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides”
ACS Nano·2025· 1 cited
P-Type Vertical FETs Realized by Using Fermi-Level Pinning-Free 2D Metallic Electrodes
Nano Letters·2024· 9 cited
Multi-Domain Data Integration for Plasma Diagnostics in Semiconductor Manufacturing Using Tri-CycleGAN
Journal of Sensor and Actuator Networks·2024· 2 citedOpen Access
Opposite synaptic plasticity in oxidation-layer-controlled 2D materials-based memristors for mimicking heterosynaptic plasticity
Nano Today·2024· 10 cited
Advances and Applications of Oxidized van der Waals Transition Metal Dichalcogenides
Advanced Science·2024· 23 citedOpen Access
Transfer-free p-type graphene field-effect transistors with high mobility and on/off ratio
Carbon·2024· 1 cited
Double-Side-Doped 2D TMD FET Channel
ACS Applied Electronic Materials·2024· 7 cited
Plasma and Gas‐based Semiconductor Technologies for 2D Materials with Computational Simulation &amp; Electronic Applications
Advanced Electronic Materials·2024· 10 citedOpen Access
Analysis of <i>p</i>-Type Doping in Graphene Induced by Monolayer-Oxidized TMDs
ACS Applied Materials & Interfaces·2024· 15 cited
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Frequent Co-authors

Won Jong Yoo(38), James Hone(18), Tien Dat Ngo(12), Xiaochi Liu(10), Ankur Nipane(8), Myeong‐jin Lee(7), Daeyeong Lee(6), Deshun Qu(6), Brian S. Y. Kim(6), Kenji Watanabe(5), Takashi Taniguchi(5), Inyong Moon(5), Faisal Ahmed(5), Amirali Zangiabadi(5), James T. Teherani(5), Fida Ali(5), Nasir Ali(5), Chang Sik Kim(4), Abhinandan Borah(4), Tuyen Huynh(4)