Sunbin Deng

Georgia Institute of Technology — United States

Engineering · Physical Sciences

17h-index1.2kcitations102works4.12yr avg
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Research Topics

Thin-Film Transistor Technologies(71), Semiconductor materials and devices(38), ZnO doping and properties(37), Nanowire Synthesis and Applications(14), Advancements in Semiconductor Devices and Circuit Design(12)

Publications102 total

Machine Learning-Assisted Compact Modeling of AC Stress-Induced Bias Temperature Instability in Top- and Bottom-Gate W-Doped In₂O₃ Channel Semiconductor Transistors
IEEE Transactions on Electron Devices·2025· 2 cited
Backside Active Power Delivery With Hybrid DC–DC Converter Enabled by Amorphous Oxide Semiconductor Transistors
IEEE Transactions on Very Large Scale Integration (VLSI) Systems·2025
Bias Temperature Instability Analysis of Oxide Power Transistors for BEOL On-chip Voltage Converter in Thermally-Constrained H3D Systems
2024· 2 cited
Boosted Performance and Enhanced Reliability of BEOL-Compatible Dual-Gate Oxide Power Transistors for On-Chip DC-DC Voltage Conversion
2024· 3 cited
BEOL-Compatible Non-Volatile Capacitive Synapse with ALD W-Doped In<sub>2</sub>O<sub>3</sub> Semiconductor Layer
2024· 2 cited
Monolithic Switched-Capacitor DC-DC Converters Using BEOL-Compatible Oxide Power Transistors and Superlattice MIM Capacitors
IEEE Transactions on Electron Devices·2024· 4 cited
Design Space Exploration of Oxide Semiconductorbased Monolithic 3D Gain Cell Memory
2024· 4 cited
Reliability of indium-tin-zinc-oxide thin-film transistors under dynamic drain voltage stress
Applied Physics Letters·2024· 1 cited
Optimization of Backside of Silicon-Compatible High Voltage Superlattice Capacitor for 12V-to-6V On-Chip Voltage Conversion
2024· 3 cited
Demonstration of On-Chip Switched-Capacitor DC-DC Converters using BEOL Compatible Oxide Power Transistors and Superlattice MIM Capacitors
2024· 7 cited
On the Reliability of High-Performance Dual Gate (DG) W-Doped In<sub>2</sub>O<sub>3</sub> FET
2024· 12 cited
Hydrogen-induced tunable remanent polarization in a perovskite nickelate
Nature Communications·2024· 8 citedOpen Access
BEOL-Compatible On-Chip DC-DC Converters
2024
Subnanometer Scale Mapping of Hydrogen Doping in Vanadium Dioxide
Nano Letters·2024· 11 citedOpen Access
Low-frequency noise in InSnZnO thin film transistors with high-quality SiO2 gate oxide stacks
Applied Physics Letters·2024· 3 cited
BEOL Compatible Oxide Power Transistors for On- Chip Voltage Conversion in Heterogenous 3D (H3D) Integrated Circuits
2023· 11 cited
Improved Reliability and Enhanced Performance in BEOL Compatible W-doped In<sub>2</sub>O<sub>3</sub> Dual-Gate Transistor
2023· 24 cited
Hydrogen-induced tunable remanent polarization in a perovskite nickelate
arXiv (Cornell University)·2023Open Access
Degradation of InSnZnO Thin-Film Transistors Under Negative Bias Stress
IEEE Transactions on Electron Devices·2023· 13 cited
Hydrogenated VO<sub>2</sub> Bits for Probabilistic Computing
IEEE Electron Device Letters·2023· 9 cited
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Frequent Co-authors

Hoi Sing Kwok(37), Rongsheng Chen(26), Guijun Li(22), Man Wong(22), Meng Zhang(13), Wei Zhong(11), Fion Sze Yan Yeung(10), Yuming Xu(8), Ping Xu(7), Wei Zhou(7), Tae Joon Park(5), Haoming Yu(5), Shriram Ramanathan(5), Zhendong Jiang(5), Lei Lü(5), Yuan Liu(5), Bin Li(5), Yan Yan(5), Zhaohui Wu(5), Abhronil Sengupta(4)