Katsuhiko Nishiguchi

NTT Basic Research Laboratories — Japan

Engineering · Physical Sciences

29h-index3.3kcitations188works0.52yr avg
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Research Topics

Semiconductor materials and devices(69), Quantum and electron transport phenomena(58), Advancements in Semiconductor Devices and Circuit Design(58), Nanowire Synthesis and Applications(29), Mechanical and Optical Resonators(26)

Publications188 total

Coulomb-mediated single-electron heat transfer statistics across capacitively coupled silicon nanodots
Communications Physics·2025Open Access
Coulomb-mediated single-electron heat transfer statistics across capacitively coupled silicon nanodots
arXiv (Cornell University)·2025Open Access
Using Silicon Transistors to Enable Control and Detection of Single Electrons toward Developing High-performance Devices and Reducing Energy Consumption
NTT technical review·2025
Scalable Parallel Single-Electron Pumps in Silicon with Split-Source Control in the Nanoampere Regime
Nano Letters·2025Open Access
Parallel Silicon Single-Electron Pumps for Generating Nanoampere Current
2025
Thermodynamic Constraints in DRAM cells: Experimental Verification of Energy Efficiency Limits in Information Erasure
ArXiv.org·2025Open Access
Effective Medium Approximation for Variable-Range Hopping
Journal of the Physical Society of Japan·2025
Electron thermometry for Si MOS inversion layer using proximity nano-transistor and its application to Joule-heating experiment
Applied Physics Letters·2025
Sensing an alternating-current signal beyond the cutoff frequency using a single-electron dynamic random-access memory
Physical Review Applied·2025· 1 cited
Decomposition of entropy production for free-energy generation in a non-equilibrium dot with multiple electron states
arXiv (Cornell University)·2025Open Access
First‐Principles Investigation of the Valley Splitting of Si Quantum Slabs
physica status solidi (b)·2024
Ferromagnetic manganese silicide nanoparticles formed by ion implantation in silicon
2024
Valley splitting by extended zone effective mass approximation incorporating strain in silicon
Journal of Applied Physics·2024· 4 citedOpen Access
Sub-Femtoampere-Current Detection Using Single-Electron Sensor Operated Around 295 K
IEEE Electron Device Letters·2024· 2 cited
Valley splitting by extended zone effective mass approximation incorporating strain in silicon
arXiv (Cornell University)·2023Open Access
Ballistic Brownian Motion of Nanoconfined DNA
ACS Nano·2023· 10 citedOpen Access
Single-Cell Electrochemical Aptasensor Array
ACS Sensors·2023· 5 citedOpen Access
Noise-to-energy conversion in a nanometer-scale dot observed with electron counting statistics
Applied Physics Letters·2023· 3 cited
Ballistic Brownian motion of nanoconfined DNA
2023Open Access
Publisher Correction: Power generator driven by Maxwell’s demon
Nature Communications·2023· 1 citedOpen Access
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Frequent Co-authors

Akira Fujiwara(34), Hiroshi Yamaguchi(13), Imran Mahboob(10), Yukinori Ono(9), Hiroshi Inokawa(9), Yasuo Takahashi(7), Shunri Oda(7), D. Vuillaume(5), Masaya Notomi(4), Y. Ono(4), N. Clément(4), Gento Yamahata(4), Akihiko Shinya(3), Eiichi Kuramochi(3), J.-F. Dufrêche(3), Takasumi Tanabe(2), Emmanuel Flurin(2), Kensaku Chida(2), David Guérin(2), Ragavendran Sivakumarasamy(2)