Yoshitaka Ohiso

Tokyo Institute of Technology — Japan

Engineering · Physical Sciences

17h-index927citations108works0.02yr avg
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Research Topics

Photonic and Optical Devices(89), Semiconductor Lasers and Optical Devices(80), Semiconductor Quantum Structures and Devices(40), Optical Network Technologies(20), Advanced Photonic Communication Systems(14)

Publications108 total

Low-Loss Amorphous-Si Strip-Loaded Thin Film Lithium Niobate on Insulator Waveguides with Compact Bending Radius
2025
Inverse Design of Low Back Reflection Grating Coupler
2023
High Temperature Operation of Membrane Photonic Integrated Circuits with Buried-Ridge-Waveguide on Si
2022 28th International Semiconductor Laser Conference (ISLC)·2022
Low-thermal-resistance by Decoupled Ridge Insulation Structure for hybrid GaInAsP/SOI ridge-waveguide lasers
2022 28th International Semiconductor Laser Conference (ISLC)·2022
Low threshold current operation of membrane DR laser on Si with buried-ridge waveguide and ACPM grating for On-chip Optical Interconnection
2022 28th International Semiconductor Laser Conference (ISLC)·2022· 1 cited
Optical ReLU using membrane lasers for an all-optical neural network
Optics Letters·2022· 6 cited
High-temperature and high-efficiency operation of a membrane optical link with a buried-ridge-waveguide bonded on a Si substrate
Optics Express·2022· 2 citedOpen Access
Proposal of ReLU Activation Function Using III-V Semiconductor Membrane Laser for Optical Neural Network
2022
Reduced Thermal Resistance of Membrane Fabry-Perot Laser Bonded on Si Through Room-Temperature, Surface-Activated Bonding Assisted by a-Si Nano-Film
IEEE Journal of Quantum Electronics·2022· 11 cited
Proposal of ReLU activation function using III-V semiconductor membrane laser for optical neural network
2022
Lateral Optical Confinement Enhanced GaInAsP Membrane Laser on Si for On-chip Optical Interconnection
2021
Bonding Position Accuracy of Direct Transfer Bonding, Chip-on-wafer Bonding for III-V/Si Heterogeneous Integration
2021
Lateral confinement enhanced membrane laser on Si with a buried-ridge-waveguide structure
Journal of the Optical Society of America B·2021· 7 cited
Lasing characteristics of GaInAsP membrane laser with enhanced lateral optical confinement by buried-ridge-waveguide structure
The Japan Society of Applied Physics·2021
Inverse Design of a 1.3- µm Compact Wavelength MUX/DEMUX Using SiN on Si platform
The Japan Society of Applied Physics·2021
Hybrid DFB Lasers Consisting of GaInAsP Gain Region and Si Vertical Grating Fabricated by Room-temperature Surface-activated Bonding
Tokyo Tech Research Repository (Tokyo Institute of Technology)·2021
Wavelength tuning operation for hybrid integration lasers with optical coupling structure between InP-based gain region and Si waveguide by multistep taper-type coupler
The Japan Society of Applied Physics·2021
Cross Gain Modulation Operation Using Wavelength Tunable Laser and Optical Amplifier on SOI Substrate by Heterogeneous Material Bonding
The Japan Society of Applied Physics·2021
Thermal resistance reduction of membrane FP laser bonded by a-Si nano-film assisted surface activated bonding
2021
Linewidth Analysis of External Cavity Hybrid InP/Si Distributed Reflector Laser with Loop Mirror-type Back Reflector
IEICE Technical Report; IEICE Tech. Rep.·2020
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Frequent Co-authors

Takashi Kurokawa(15), Kouta Tateno(11), C. Amano(10), Y. Kohama(8), Shinji Matsuo(7), Naoki Fujiwara(7), Takahiko Shindo(6), Hideaki Matsuzaki(6), Shigeru Kanazawa(5), Takehiko Segawa(5), R. Iga(5), Hiroyuki Ishii(5), Tomohiro Amemiya(5), Nobuhiko Nishiyama(5), H. Suzuki(5), M. Kohtoku(4), Hiroshi Okamoto(4), Hirokazu Takenouchi(4), Wataru Kobayashi(4), Hiroyuki Tsuda(4)