H. Riemann

Engineering · Physical Sciences

39h-index5.6kcitations274works0.02yr avg
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Research Topics

Silicon and Solar Cell Technologies(81), Semiconductor materials and interfaces(57), Silicon Nanostructures and Photoluminescence(55), Semiconductor Quantum Structures and Devices(52), Terahertz technology and applications(43)

Publications274 total

Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
arXiv (Cornell University)·2024Open Access
New properties of boron-oxygen dimer defect in boron-doped Czochralski silicon
Journal of Applied Physics·2022· 2 cited
Highly efficient THz transient four-wave mixing in doped semiconductors
2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)·2022
The Features of Infrared Absorption of Boron‐Doped Silicon
physica status solidi (a)·2021· 3 cited
Highly efficient THz four-wave mixing in doped silicon
Light Science & Applications·2021· 16 citedOpen Access
Terahertz transient stimulated emission from doped silicon
APL Photonics·2020· 2 citedOpen Access
Author Correction: Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe
npj Quantum Information·2020· 4 citedOpen Access
Frequency Tuning of Terahertz Stimulated Emission under the Intracenter Optical Excitation of Uniaxially Stressed Si:Bi
Semiconductors·2020· 1 citedOpen Access
Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible
Crystal Research and Technology·2020· 2 citedOpen Access
Characterization of the T center in $^{28}$Si
arXiv (Cornell University)·2020· 1 citedOpen Access
Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe
npj Quantum Information·2020· 121 citedOpen Access
Low-frequency electron spin-qubit detuning noise in highly purified 28 Si/SiGe
Bulletin of the American Physical Society·2020
Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon
Journal of Applied Physics·2020· 3 citedOpen Access
Перестройка спектра терагерцового стимулированного излучения при внутрицентровом оптическом возбуждении одноосно-деформированного Si : Bi
Физика и техника полупроводников·2020Open Access
Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation
Semiconductors·2019· 1 citedOpen Access
Tunable Stokes Shift in Uniaxially Stressed Silicon with Shallow Donors
2019· 1 cited
Large and tunable valley splitting in $^{28}$Si/SiGe quantum dots
arXiv (Cornell University)·2019· 3 citedOpen Access
Features of the Formation of the B<sub>i</sub>B<sub>s</sub> Defect in Si
physica status solidi (a)·2019· 1 cited
Characterization of the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Si</mml:mi></mml:math>:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msup><mml:mi>Se</mml:mi><mml:mo>+</mml:mo></mml:msup></mml:math> Spin-Photon Interface
Physical Review Applied·2019· 23 citedOpen Access
Стимулированное терагерцовое излучение доноров висмута в одноосно-деформированном кремнии при внутрицентровом оптическом возбуждении
Физика и техника полупроводников·2019Open Access
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Frequent Co-authors

Peter Becker(27), N. V. Abrosimov(23), M. L. W. Thewalt(17), H.‐J. Pohl(15), John J. L. Morton(11), Nikolai V. Abrosimov(11), Michael F. Steger(11), Hans-Joachim Pohl(10), Kohei M. Itoh(10), O. N. Godisov(10), A. Yang(10), А. Д. Буланов(9), M. L. W. Thewalt(8), A. K. Kaliteevskiĭ(8), A. V. Gusev(7), Joel W. Ager(7), R. Kh. Zhukavin(6), V. N. Shastin(6), M. Cardona(6), S. A. Lyon(5)