Damian Urciuoli

United States Department of the Army — United States

Engineering · Physical Sciences

17h-index719citations61works1.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Silicon Carbide Semiconductor Technologies(51), Semiconductor materials and devices(24), Electrostatic Discharge in Electronics(15), Advancements in Semiconductor Devices and Circuit Design(12), Advanced DC-DC Converters(9)

Publications61 total

Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2024· 1 citedOpen Access
Dynamic On-State Resistance in SiC MOSFETs
2023· 2 cited
Effect of Dynamic Threshold-Voltage Instability on Dynamic ON-State Resistance in SiC MOSFETs
IEEE Transactions on Electron Devices·2022· 18 cited
Design of a Battery-Powered Gate Driver for Medium-Voltage Silicon Carbide Switch Modules in Pulsed Applications
2022
(Invited) Updated Issues Regarding Threshold-Voltage Instability in SiC MOSFETs
ECS Meeting Abstracts·2022
(Invited) BTI Reliability Issues for SiC MOSFETs
ECS Meeting Abstracts·2021
(Invited) Updated Key Issues for SiC MOSFET Reliability
ECS Meeting Abstracts·2020· 1 cited
Design Comparison of Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs) for Linear-Mode Operation
2019
Multifunctional Chip for Use in Thermal Analysis of Power Systems
2018
Short-Circuit Robustness of SiC Trench MOSFETs
Materials science forum·2018· 13 cited
Development of a Compact, 240-kV, 10-J Impulse Generator for Mobile Platforms
2018· 1 cited
SiC MOSFETs designed and evaluated for linear mode operation
2017· 5 cited
Experimental evaluation of metallic phase change materials for thermal transient mitigation
International Journal of Heat and Mass Transfer·2017· 69 cited
Short-Circuit Robustness Testing of SiC MOSFETs
Materials science forum·2017· 18 cited
Stacked power module with integrated thermal management
2017· 32 cited
Multi-Channel, Constant-Current Power Source for Aircraft Applications
2017
Relating Silicon Carbide Avalanche Breakdown Diode Design to Pulsed-Energy Capability
2017
A compact 100-A, 850-V, silicon carbide solid-state DC circuit breaker
2016· 26 citedOpen Access
Suitability of N-ON Recessed Implanted Gate Vertical-Channel SiC JFETs for Optically Triggered 1200 V Solid-State Circuit Breakers
IEEE Journal of Emerging and Selected Topics in Power Electronics·2016· 8 cited
Suitability of N-ON recessed implanted gate vertical-channel SiC JFETs for optically triggered 1200 V solid-state-circuit-breakers
2015· 12 cited
page 1 of 4Next →

Frequent Co-authors

Victor Veliadis(16), H. C. Ha(10), Stephen Bayne(10), Aivars J. Lelis(10), Charles Scozzie(9), Dimeji Ibitayo(8), Ronald Green(8), C. W. Tipton(7), Thomas Salem(6), Gregory K. Ovrebo(6), Kevin Lawson(6), Pavel Borodulin(6), Lauren Boteler(5), Nabil El-Hinnawy(5), Erik Schroen(5), R. Green(4), B. Steiner(4), Daniel B. Habersat(4), Miguel Hinojosa(4), R.J.K. Wood(4)